ADL8100
新規設計に推奨GaAs, pHEMT, MMIC, Low Noise Amplifier, 0.01 GHz to 20 GHz
- 製品モデル
- 2
- 1Ku当たりの価格
- 最低価格:$108.67
製品の詳細
- Low noise figure: 2.5 dB typical at 6 GHz to 14 GHz
- Single positive supply (self biased)
- High gain: 20 dB typical from 0.01 GHz to 6 GHz
- High OIP3: 38 dBm typical from 0.01 GHz to 6 GHz
- RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP
The ADL8100 is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), wideband low noise amplifier (LNA) that operates from 0.01 GHz to 20 GHz. The ADL8100 provides a typical gain of 20 dB at 0.01 GHz to 6 GHz, a 2.5 dB typical noise figure at 6 GHz to 14 GHz, and a typical output third-order intercept (OIP3) of 38 dBm at 0.01 GHz to 6 GHz, requiring only 220 mA from a 5 V supply voltage. The power dissipation can be lowered at the expense of OIP3 and output power. The ADL8100 also features inputs and outputs that are DC-coupled and internally matched to 50 Ω.
The ADL8100 is housed in a RoHS-compliant, 2 mm × 2 mm, 8-lead LFCSP.
APPLICATIONS
ドキュメント
データシート 2
ユーザ・ガイド 1
技術記事 1
製品モデル | ピン/パッケージ図 | 資料 | CADシンボル、フットプリント、および3Dモデル |
---|---|---|---|
ADL8100ACPZN | 8-lead LFCSP 2 mm × 2 mm × 0.85 | ||
ADL8100ACPZN-R7 | 8-lead LFCSP 2 mm × 2 mm × 0.85 |
製品モデル | 製品ライフサイクル | PCN |
---|---|---|
9 28, 2023 - 23_0146 Process Revision for Select Low Noise Amplifier Products |
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ADL8100ACPZN | 製造中 | |
ADL8100ACPZN-R7 | 製造中 |
これは最新改訂バージョンのデータシートです。