ADPA9002
新規設計に推奨GaAs, pHEMT, MMIC, Single Positive Supply, DC to 10 GHz Power Amplifier
- 製品モデル
- 2
- 1Ku当たりの価格
- 最低価格:$120.96
製品の詳細
- OP1dB: 29 dBm typical
- Gain: up to 15 dB typical
- OIP3: up to 43 dBm typical
- Self biased at VDD = 12 V at 385 mA typical with an optional bias control on VGG1 for IDQ adjustment
- 50 Ω matched input/output
- 32-lead, 5 mm × 5 mm LFCSP
The ADPA9002 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), power amplifier that operates between dc and 10 GHz. The amplifier provides 15 dB of gain, 42 dBm of OIP3, and 31.5 dBm of saturated output power (PSAT) while requiring 385 mA from a 12 V supply. The ADPA9002 is self biased in normal operation and has an optional bias control for supply quiescent current (IDQ) adjustment. The amplifier is ideal for military and space and test equipment applications. The ADPA9002 also features inputs and outputs that are internally matched to 50 Ω, housed in a RoHS compliant, 5 mm × 5 mm LFCSP premolded cavity package, making it compatible with high volume surface-mount technology (SMT) assembly equipment.
Note that throughout this data sheet, multifunction pins, such as RFOUT/VDD, are referred to either by the entire pin name or by a single function of the pin, for example, VDD, when only that function is relevant.
Applications
- Military and space
- Test instrumentation
ドキュメント
データシート 2
ユーザ・ガイド 1
アプリケーション・ノート 2
技術記事 1
製品選択ガイド 1
製品モデル | ピン/パッケージ図 | 資料 | CADシンボル、フットプリント、および3Dモデル |
---|---|---|---|
ADPA9002ACGZN | 32-Lead LFCSP (5mm x 5mm w/ EP) | ||
ADPA9002ACGZN-R7 | 32-Lead LFCSP (5mm x 5mm w/ EP) |
製品モデル | 製品ライフサイクル | PCN |
---|---|---|
3 19, 2021 - 20_0308 Epoxy Change at ASE Chungli Branch for PM5E and ACGZN Packages |
||
ADPA9002ACGZN | 製造中 | |
ADPA9002ACGZN-R7 | 製造中 |
これは最新改訂バージョンのデータシートです。