ADPA9007-2
推荐新设计使用DC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier
- 产品模型
- 2
产品详情
- Wideband, internally matched, RF power amplifier
- DC-coupled input and output
- Integrated RF power detector
- Integrated temperature sensor
- Gain: 13 dB typical at 8 GHz to 16 GHz
- OP1dB: 32.5 dBm typical at 8 GHz to 16 GHz
- PSAT: 33.5 dBm typical at 8 GHz to 16 GHz
- OIP3: 43.5 dBm typical at 8 GHz to 16 GHz
The ADPA9007-2CHIP is a 2 W, RF power amplifier that operates from DC to 28 GHz. The RF input and output are internally matched and DC-coupled. The ADPA9007-2CHIP includes an integrated temperature-compensated RF power detector and an integrated temperature sensor.
The ADPA9007-2CHIP amplifier provides a gain of 13 dB, an output power for 1 dB compression (OP1dB) of 32.5 dBm, and an output third-order intercept (OIP3) of 43.5 dBm from 8 GHz to 16 GHz. The amplifier operates from a typical supply voltage (VDD) of 15 V and has a 500 mA typical quiescent drain current (IDQ), which is adjustable.
The ADPA9007-2CHIP is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process and is specified for operation from −55°C to +85°C.
APPLICATIONS
- Electronic warfare
- Radar
- Test and measurement equipment
参考资料
ADI 始终高度重视提供符合最高质量和可靠性水平的产品。我们通过将质量和可靠性检查纳入产品和工艺设计的各个范围以及制造过程来实现这一目标。出货产品的“零缺陷”始终是我们的目标。查看我们的质量和可靠性计划和认证以了解更多信息。
| 产品型号 | 引脚/封装图-中文版 | 文档 | CAD 符号，脚注和 3D模型 |
|---|---|---|---|
| ADPA9007-2C-SX | CHIPS OR DIE | ||
| ADPA9007-2CHIP | CHIPS OR DIE |
这是最新版本的数据手册
工具及仿真模型
S-参数 1
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