ADH1126S
推荐用于新设计Aerospace, GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz – 50 GHz
- 产品模型
- 1
产品详情
- Output Power for 1 dB Compression (OP1dB): 17.5 dB Typ.
- Saturated Output Power (PSAT): 21 dBm Typ.
- Gain: 11 dB Typ.
- Output Third-Order Intercept (OIP3): +28 dBm Typ.
- Supply Voltage: +5 V @ 65 mA
- 50 Ω matched Input/Output.
- Die Size: 2.3 mm X 1.45 mm X 0.05 mm
- Screened in accordance with MIL-PRF-38534, Class K
The ADH1126S is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 2 GHz to 50 GHz. The ADH1126S provides 11 dB of gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dB gain compression, while requiring 65 mA from a 5 V supply.
The ADH1126S amplifier inputs/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs).
Applications
- Instrumentation
- Microwave Communications
- Military & Space
参考资料
应用笔记 1
控制图纸 1
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| 产品型号 | 引脚/封装图-中文版 | 文档 | CAD 符号，脚注和 3D模型 |
|---|---|---|---|
| HMC8659 | CHIPS OR DIE |
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