ADH-ALH382S
推荐用于新设计57 GHz to 65 GHz Low Noise Amplifier
- 产品模型
- 1
产品详情
- Noise Figure: 3.8 dB
- Output P1dB: +12 dBm
- Gain: 21 dB
- Supply Voltage: +2.5 V
- 50 Ohm Matched Input/Output
- Die size: 1.55 mm x 0.73 mm x 0.1 mm
- Screened in accordance with MIL-PRF-38534, Class K
The ADH-ALH382S is a high dynamic range, four stage GaAs HEMT MMIC low noise Amplifier (LNA) which operates between 57 GHz and 65 GHz. The ADH-ALH382S features 21 dB of small signal gain, 4 dB of noise figure and an output power of +12 dBm at 1dB compression from a +2.5V supply voltage. All bond pads and the die backside are Ti/ Au metallized and the amplifier device is fully passivated for reliable operation. This versatile LNA is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications.
Applications
- Short Haul / High-Capacity Links
- Military & Space
参考资料
应用笔记 1
控制图纸 1
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| 产品型号 | 引脚/封装图-中文版 | 文档 | CAD 符号，脚注和 3D模型 |
|---|---|---|---|
| HMC8657 | CHIPS OR DIE |
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