ADPA1116
推荐新设计使用0.3 GHz to 6 GHz, 39.5 dBm, GaN Power Amplifier
- 产品模型
- 2
产品详情
- Internally matched, 0.3 GHz to 6 GHz, 39.5 dBm, GaN power amplifier
- RF input and RF output AC-coupled
- Integrated drain bias inductors
- Output power: 39.5 dBm typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm)
- Power gain: 23.5 dB typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm)
- PAE: 40% typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm)
- Small signal gain: 33.5 dB typical from 0.5 GHz to 5 GHz
- Supply voltage: 28 V
- Quiescent current: 300 mA
The ADPA1116 is a 0.3 GHz to 6 GHz power amplifier with a saturated output power (POUT) of 39.5 dBm, power added efficiency (PAE) of 40%, and a power gain of 23.5 dB typical from 0.5 GHz to 5 GHz at an input power (PIN) of 16.0 dBm. The RF input and RF output are internally matched and AC-coupled. A drain bias voltage of 28 V is applied to the VDD1 and VDD2 pins, which have integrated bias inductors. The drain current is set by applying a negative voltage to the VGG1 pin.
The ADPA1116 is fabricated on a gallium nitride (GaN) process, is housed in a 32-lead lead frame chip scale package, premolded cavity [LFCSP_CAV], and is specified for operation from −40°C to +85°C.
参考资料
ADI 始终高度重视提供符合最高质量和可靠性水平的产品。我们通过将质量和可靠性检查纳入产品和工艺设计的各个范围以及制造过程来实现这一目标。出货产品的“零缺陷”始终是我们的目标。查看我们的质量和可靠性计划和认证以了解更多信息。
产品型号 | 引脚/封装图-中文版 | 文档 | CAD 符号,脚注和 3D模型 |
---|---|---|---|
ADPA1116ACGZN | 32-Lead LFCSP (5mm x 5mm w/ EP) | ||
ADPA1116ACGZN-R7 | 32-Lead LFCSP (5mm x 5mm w/ EP) |
这是最新版本的数据手册
工具及仿真模型
S-参数 1
评估套件
最新评论
需要发起讨论吗? 没有关于 adpa1116的相关讨论?是否需要发起讨论?
在EngineerZone®上发起讨论