MAX6516

量产

低成本、2.7V至5.5V、模拟温度传感器开关,SOT23封装

低成本、2.7V至5.5V模拟温度检测开关,采用SOT23封装,当管芯温度超出工厂编程的门限时产生报警信号

产品模型
2
产品技术资料帮助

ADI公司所提供的资料均视为准确、可靠。但本公司不为用户在应用过程中侵犯任何专利权或第三方权利承担任何责任。技术指标的修改不再另行通知。本公司既没有含蓄的允许,也不允许借用ADI公司的专利或专利权的名义。本文出现的商标和注册商标所有权分别属于相应的公司。

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产品详情

  • -15°C至+65°C温度范围内具有±1.5°C (最大)的高精确度
  • 低功耗,典型电流22µA
  • 工厂可编程门限,范围-45°C至+115°C,级差10°C
  • 模拟输出允许板级测试
  • 漏极开路或推挽式输出
  • 引脚可选2°C或10°C滞回
MAX6516
低成本、2.7V至5.5V、模拟温度传感器开关,SOT23封装
MAX6516、MAX6517、MAX6518、MAX6519:典型工作电路
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硬件生态系统

部分模型 产品周期 描述
温度开关 4
MAX6501 量产 采用SOT23封装的低成本、+2.7V至+5.5V、微功耗温度开关
MAX6502 量产 低成本、+2.7V至+5.5V、微功耗温度开关,SOT23封装
MAX6503 量产 低成本、+2.7V至+5.5V、微功耗温度开关,SOT23封装
MAX6504 量产 低成本、+2.7V至+5.5V、微功耗温度开关,SOT23封装
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评估套件

eval board
AD-PAARRAY3552R-SL

RF Front-end GaN Power Amplifier Biasing, Protection, and Control Reference Design

特性和优点

  • Designed to cover full Tx signal chains with integrated MCU and user-friendly GUI for faster and easier integration
  • Supports fault event protection - overvoltage (OV), overcurrent (OC), and overtemperature (OT)
  • Supports ultrafast sub-µs GaN gate voltage switching ~ (<1 µs)
  • Supports ultrafast (<10 µs) fault event protection from detection up to GaN gate pinch-off
  • Wide range of gate bias voltages from -10 V to +10 V
  • Configurable power-up and power-down sequence

产品详情

The AD-PAARRAY3552R-SL reference design provides control, protection, and proper biasing sequence for GaN power amplifier (PA) arrays. The design incorporates the AD3553R high-speed, dual-channel, 16-bit DAC to support the ultrafast sub-µs voltage settling time of GaN gates.

Key fault events, including overvoltage, overcurrent, and overtemperature, are effectively managed by the LTC7000, a static switch driver responsible for system fault protection.

The on-board MAX32666 ultralow-power ARM® Cortex®-M4 microprocessor provides essential debug and programming features for a comprehensive software development experience with the system. The system's firmware is built on ADI's open-source no-OS framework and includes a user-friendly graphical interface (GUI) for evaluation. Updates are easily applied through an SWD UART bootloader, streamlining prototyping.

The system can be powered by an external +48 V supply, requiring high current capabilities.

APPLICATIONS

  • 5G massive MIMOs
  • Macro base stations
Specifications
Fault Events
Fault Default Limit
Overvoltage +55 V
Overcurrent 3.5 A
Overtemperature 75°C
Output Ports
Port Name No. of ports
GaN gate ports 6
+48 V Gan drain ports 4
+5 V ports 5
Enable ports 2
Power Supply
External +48 V DC at 5 A
Operating Conditions
Temperature Range 45°C to +75°C

AD-PAARRAY3552R-SL
RF Front-end GaN Power Amplifier Biasing, Protection, and Control Reference Design
AD-PAARRAY3552R-SL Block Diagram AD-PAARRAY3552R-SL Board Photo Angle View AD-PAARRAY3552R-SL Board Photo Top View AD-PAARRAY3552R-SL Board Photo Bottom View

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