AN-2046: IEC 61000-4-x and CISPR 11 Tested Analog Output Design with the AD5758 and ADP1031 for Industrial Process Control Applications

INTRODUCTION

The AD5758 is a single-channel, 16-bit, voltage and current output digital-to-analog converter (DAC) with on-chip dynamic power control (DPC) and HART® connectivity. The AD5758 is designed to work with programmable logic controller (PLC) and distributed control system (DCS) modules of industrial process control applications.

The ADP1031 is a high performance, isolated micropower management unit (microPMU) that provides three isolated power rails. Additionally, the ADP1031 contains four high speed serial peripheral interface (SPI) isolation channels and three general-purpose isolators for channel to channel applications where low power dissipation and small solution size are required.

This application note describes an electromagnetic compatibility (EMC) tested solution of the analog output design with the ADP1031ACPZ-1-R7 (hereafter referred to as the ADP1031) and the AD5758 output voltage (VOUT) and output current (IOUT) for industrial process control with dynamic power control. The IEC 61000-4-x set of standards cover the evaluation of the immunity of electrical and electronic equipment at a system level.

The AD5758 and ADP1031 EMC test board is characterized to ensure that the circuit performance is not affected by radiated RF or conducted RF disturbances, and has sufficient immunity against electrostatic discharge (ESD), electrical fast transients (EFT), and surge. The EMC test board was also tested per the CISPR 11 standard, in which the radiated emissions of the board are well below the Class B limits due to the improved electromagnetic interference (EMI) performance of the ADP1031. The ADP1031 passes the CISPR 11 Class B limits with a greater than 9 dB margin, due to its high integration and design optimizations. The AD5758 and ADP1031 EMC test board design significantly reduces the risk of failing IEC 61000-4-x and CISPR 11 certification in multichannel analog output applications with the AD5758 and ADP1031.

The AN-1599 Application Note, IEC 61000-4-x and CISPR 11 Tested Analog Output Design with the AD5758 for Industrial Process Control Applications, describes the AD5758 EMC test board, which shares the same blank PCB of this board but is assembled with partially different bill of materials (BOM). The AD5758 EMC test board uses discrete ICs to implement the power and digital isolation of the ADP1031. The AD5758 EMC test board has comparable immunity but only passes CISPR 11 Class A limits. Refer to the AN-1599 Application Note for additional details.

Figure 1. AD5758 and ADP1031 EMC Test Board Photograph

SYSTEM DESIGN

AD5758 DAC DESCRIPTION


The AD5758 is a single-channel, voltage and current output DAC that operates with a 60 V maximum operating voltage between the AVSS and AVDD1 rails. The on-chip DPC minimizes package power dissipation, which is achieved by regulating the supply voltage (VDPC+) to the VIOUT output driver circuitry from 5 V to 27 V using a buck dc-to-dc converter. The CHART pin enables a HART signal to couple to the current output.

The device uses a versatile, 4-wire serial peripheral interface (SPI) that operates at clock rates of up to 50 MHz and is compatible with standard SPI, QSPI, MICROWIRE, DSP, and microcontroller interface standards. The interface also features an optional SPI cyclic redundancy check (CRC) and a watchdog timer (WDT). The AD5758 offers diagnostic features, such as output current monitoring and an integrated 12-bit diagnostic analog-to-digital converter (ADC). Additional robustness is provided by the inclusion of a fault protection switch on the VIOUT, +VSENSE, and −VSENSE pins.

For full details, refer to the AD5758 data sheet.


ADP1031 MICROPOWER MANAGEMENT UNIT DESCRIPTION


The ADP1031 is a high performance, isolated microPMU that combines an isolated flyback dc-to-dc regulator, an inverting dc-to-dc regulator, and a buck dc-to-dc regulator, providing three isolated power rails.


CIRCUIT DESCRIPTION


This circuit is a single-channel, isolated, industrial voltage and current output module for harsh EMI/EMC environments featuring the AD5758 DAC and ADP1031 microPMU with seven digital isolators. This design is targeted for PLC and DCS applications. The AD5758 and ADP1031 EMC test board is designed to satisfy the IEC 6100-4-x and CISPR 11 standards intended for use in the harsh industrial environments that is stated in IEC 61000-6-2 generic standard. The AD5758 and ADP1031 EMC test board is a BOM variant of the AD5758 EMC test board described in the AN-1599. These two boards are assembled on the same blank PCB. The only difference of the variant in this application note is that the ADP1031 replaces the discrete power and digital isolation implementation consisting of the LT8300, ADP2360, ADuM141D, ADuM142D, and ADM6339.


Powering the Design

The AD5758 and ADP1031 EMC test board is powered by two separate supplies. The first 24 V input is supplied to the ADP1031, which greatly simplifies the isolated power supply design. On this EMC test board, the ADP1031 is used to generate an isolated 20 V and powers the AVDD1 pin of the AD5758. The ADP1031 5.15 V VOUT2 and −15 V VOUT3 also supply the voltage for the AVDD2 and AVSS pins of the AD5758, respectively. The second 24 V supply powers the circuits on the system side domain, including the microprocessor and digital isolator. The ADP7142 steps the 24 V supply down to 5 V, which supplies the circuits where 5 V logic or 5 V power is required. A low dropout (LDO) regulator, the ADP124, further regulates the 5 V supply to 3 V for low power components, including the ADuCM3029. The AD5758 and ADP1031 EMC test board can operate from a single 24 V supply, but the two 24 V supplies must be isolated from each other to demonstrate that the system power and the field power are separate power supplies. The two 24 V supplies are meant to mimic the typical use case, where the system power and the field power are supplied separately within the system.


Isolation Considerations

A properly placed isolation barrier is often the first method used to improve EMC robustness. The ADP1031 provides electrical isolation between the field side AD5758 and the system side microcontroller unit (MCU). Take precautions to achieve optimal EMC and EMI performance. For optimum radiated emission performance, it is recommended to connect an inductor and capacitor (LC) filter, consisting of a ferrite bead and 100 nF and 10 nF capacitors in parallel to each other, to the MVDD, SVDD1, and SVDD2 pins. A 0.001 μF ceramic capacitor across the isolation barrier also reduces the radiated emission. See the AN-1109 Application Note, Recommendations for Control of Radiated Emissions with iCoupler Devices, for more details.

The ADP1031 isolated flyback converter drives a flyback transformer. A 1 nF, 3 kV capacitor across the primary and secondary side provides a return path for the image current.

The ADuCM3029 ultra low power Arm® Cortex®-M3 MCU provides local control and data communication for the AD5758 and ADP1031 EMC test board. The ADuCM3029 has an acceptable emission profile and has adequate immunity in the IEC 61000-4-x tests.

Figure 2. AD5758 and ADP1031 EMC Test Board in Circuit

PRINTED CIRCUIT BOARD

The AD5758 and ADP1031 EMC test board is built on a FR4 4-layer printed circuit board (PCB). The primary side and the secondary side of the PCB have 0.5 oz copper foil, and the internal layers are on 1 oz copper. The PCB stack is illustrated in Figure 3.

Figure 3. PCB Stack

COMPONENT PLACEMENT AND LAYOUT CONSIDERATIONS


This section describes design considerations for optimal EMC and EMI performance of the AD5758 with the minimum man-datory components (general recommendations on component placement, and distances from connector).

Place the digital interface side of the AD5758 close to the isolators. The damping resistors (around a few tens of ohms to hundreds of ohms) on the digital lines attenuate the electrical transients due to the CMOS switching on and off, which helps to reduce EMI. The VIOUT side of the AD5758 must be close to the 4-pin output terminal block on the edge of the AD5758 and ADP1031 EMC test board.


Other Component Considerations

The AD5758 and ADP1031 EMC test board uses 0.1 μF, 50 V, X7R, 10%, low equivalent series resistance (ESR) ceramic capacitors in the C0603 footprint for the decoupling capacitors, which is a trade-off among considerations for performance, derating, cost, and space savings. In some cases, when closer decoupling is required, a 1 nF, 25 V, X7R capacitor in the C0402 footprint is applied.


Voltage Supply Protection

The scope of EMC or EMI evaluation and demonstration focuses on the AD5758 and its companion parts. The two 24 V power supply circuits on the AD5758 and ADP1031 EMC test board provide the necessary voltages for the function of the board. The supply circuits are not intended to match the robustness of the power supply module or the backplane supply in the automation control system of a user. Therefore, only basic protections are implemented for these supply circuits. In the 24 V supply for the system side, a 1 nF capacitor is placed next to each pin of the power input terminal to the protected ground, where transient energy can be discharged to the earth ground through a 3.3 nF, 3 kV capacitor. The 4.7 MΩ resistor bleeds energy to the earth, which can accumulate on the protected ground. A transient voltage suppression (TVS) diode is inserted to prevent miswiring to the power supply input. The TVS diode clamps the transient voltage from going higher than 33 V (nominal). A common-mode inductor attenuates the emissions escaping from the downstream circuits. A second TVS diode is inserted after the inductor provides further clamping for the transient. The 24 V power supply for the field side has a similar protection scheme.


ESD Protection

The AD5758 and ADP1031 EMC test board must have appropriate ESD protection circuitry. The protection consists of a current limiting resistor, a transient voltage clamp, and a transient energy diverting capacitor.

There are three minimum mandatory components for EMC and EMI of the AD5758. A 10 Ω resistor on the trace between the AD5758 VIOUT pin and the terminal block limits the transient current to and from the device. The TVS diode is crucial to clamp the electrical transient on the board during EMC events. A TVS diode is inserted between the AD5758 and the output terminal block. The pins of the TVS diode are directly routed to the VIOUT and RETURN screws (on the P4 terminal) with short and heavy traces. A 10 nF, 50 V, X7R capacitor located in parallel to the TVS diode diverts the small amount of high frequency transient to the RETURN screw. Optional clamp diodes connected to the AVDD1 and AVSS rails can be added to the VIOUT line to further improve the robustness. However, these diodes are unnecessary for the AD5758 and ADP1031 EMC test board because the EMC and EMI performance objectives are met without them.

Figure 4. AD5758 and ADP1031 Bypass and Peripheral Circuit
Figure 5. General EMC Test Setup

CIRCUIT EVALUATION AND TEST


The AD5758 reference design is run by being connected to a PC or run in standalone mode. The graphic user interface (GUI) on the PC configures the running parameters, such as DAC output range, output code, and ADC sequencing. The GUI displays the fault flag map and plots the reading from the AD5758 on-chip, diagnostic ADC nodes.

When the operational parameters are programmed in the on-board flash memory, the board can be disconnected from the PC or controller board when the software is operating. To operate the board, power up the board and press the RUN or STOP buttons on the AD5758 and ADP1031 EMC test board.

Figure 5 shows the general setup of the AD5758 and ADP1031 EMC test board for EMC tests. Before and after each potentially destructive EMC test, the precision bench digital multimeter (DMM) takes 300 measurements of the AD5758 output on the load resistor. The deviation between the two sets of DMM measurements must stay within the predefined range to meet the performance criterion. The maximum allowable deviation is 0.1% of full scale, which aligns with the common requirements of the industrial automation applications.

During the nondestructive EMC tests, the bench DMM contin-uously measures the AD5758 output on the load resistor. The measurements taken during and after the EMC event are compared to the average of the DMM measurement before the EMC event for judging the performance criterion.

In the emissions test, the AD5758 is configured to output the full-scale voltage or current that is being refreshed at 1 kHz, and the AD5758 and ADP1031 EMC test board runs in standalone mode. The only auxiliary devices in this setup are two 24 V battery packs that power the AD5758 and ADP1031 EMC test board. These battery packs are assumed to not contribute EMI.


SOFTWARE NEEDED


To perform EMC testing on the AD5758, the following software is required:

  • Firmware, Revision 57-58-E0-01 on the AD5758 and ADP1031 EMC test board
  • AD5758 system EMC GUI software, Revision 1.0.0.1
  • Keysight Technologies BenchVue™ software, Version 2.6

EQUIPMENT NEEDED


To perform EMC testing on the AD5758, the following equipment is required:

  • Optical USB transceiver board
  • Industrial fiber optic cable
  • PC running Windows® 7, 64-bit version, image model: V3.0.2011.10.14
  • DC power supplies: Agilent 3630A and Agilent 3631A
  • Digital multimeter: Keysight 33470A
  • 2 m (1 pair twisted) conductor multiconductor cable: Belden 8761
  • Line filter: Schaffner FN353Z-30-33

A load resistor is connected to the AD5758 by a 2 m cable (Belden 8761, twisted, shielded pair). In current output mode, the load is a radial leaded, 500 Ω, ±0.005%, ±0.8 ppm/°C, 600 mW, 300 V foil resistor. In voltage output mode, the load is a radial leaded, 1 kΩ, ±0.01%, ±0.8 ppm/°C, 600 mW, 300 V foil resistor.

A pair of twisted leads, followed by a low-pass filter, probes the voltage across the load resistor. The filter output is wired to the Keysight 33470A DMM with a pair of twisted leads. The DMM integration time is set to a 0.02 power line cycle (400 μs). A USB cable connects the DMM to the PC. The AD5758 GUI software monitors the AD5758 status register every 1 ms via the electrically isolated data link.

The AD5758 system EMC GUI software sends parameters to the local microprocessor to write to the AD5758. For each EMC and EMI test item, the AD5758 and ADP1031 EMC test board is tested in voltage output mode and current output mode.

Two output conditions are checked in each output mode. The first condition is an alternated write of 0xFFFF and 0x8000 to the AD5758 every 2 sec to verify that the AD5758 output is actively updated according to the input code during the EMC tests. The second condition is a fixed write of 0xFFFF to the AD5758 every 1 ms for the simplified calculation of the AD5758 output deviation, during and after EMC events.

Figure 6. AD5758 System EMC Software GUI, Toggling Output
Figure 7. AD5758 System EMC Software GUI, Stable Output

The AD5758 and ADP1031 EMC test board is tested to and meets the CISPR 11 and IEC 61000-4-x standards described in Table 1 and Table 2. Table 3 describes the performance criteria listed in Table 2.


STANDARDS AND PERFORMANCE CRITERIA


The AD5758 and ADP1031 EMC test board is designed to pass the EMC and EMI test items and limits, and to meet the performance criteria. The EMC test board limits and performance criteria are defined according to the IEC 61000-6-2 and the IEC 61131-2 standards. According to these standards, the following six applicable tests were selected:

  • IEC 61000-4-2
  • IEC 61000-4-3
  • IEC 61000-4-4
  • IEC 61000-4-5
  • IEC 61000-4-6
  • CISPR 11

Table 1. Emissions Performance Summary
Test Basic Standard Frequency Range (MHz) Limits Measured Minimum Margin (dBμV/m) Result
Radiated Emissions CISPR 11, Class B 30 to 1000 See Table 11 and Table 12 9.07 Pass
Table 2. Immunity Performance Summary
Test Basic Standard Test Levels Performance Criterion Measured
Minimum
Margin
Result
Conducted Immunity IEC 61000-4-6 20 V/m A See Table 4 Pass
Radiated Immunity IEC 61000-4-3 20 V/m A See Table 10 Pass
ESD IEC 61000-4-2
IEC 61000-4-2
IEC 61000-4-2
±6 kV contact
±12 kV air
±30 kV coupling
B
B
B
See Table 5
See Table 6
See Table 7
Pass
Pass
Pass
EFT IEC 61000-4-4 ±4 kV B See Table 8 Pass
Surge IEC 61000-4-5 ±4 kV B See Table 9 Pass
Table 3. Performance Criteria
Performance Criterion Description
A Normal performance within an error band specified by the manufacturer.
B Temporary loss of function or degradation of performance, which ceases after the disturbance is removed. The equipment under test (EUT) recovers its normal performance without operator intervention.
C Temporary loss of function or degradation of performance. Correction of performance requires operator intervention, such as manual restart, power off, or power on.
D Loss of function or degradation of performance, which is not recoverable. Permanent damage to hardware or software, or loss of data.

EMC AND EMI MEASUREMENT RESULTS OF THE AD5758 AND ADP1031 EMC TEST BOARD

CONDUCTED IMMUNITY


As per IEC 61000-4-6, the EUT is placed on an insulating support that is 0.1 m high above a ground reference plane. All cables exiting the EUT are supported at a height of at least 30 mm above the ground reference plane. The interference is injected with a coupling and decoupling network (CDN), 801A. The cable is decoupled by an attenuation clamp, KEMZ 801A. The frequency range is swept from 150 kHz to 80 MHz (20 V/m) with the disturbance signal of 80% amplitude modulated with a 1 kHz sine wave. The step size is 1% of the start and thereafter 1% of the preceding frequency value where the frequency is swept incrementally. The dwell time of the amplitude-modulated carrier at each frequency is 0.5 sec. During this interval, the DMM is able to complete more than 30 measurements, which is adequate for calculating the error deviation.

Table 4. IEC 61000-4-6 Test Levels and Results
Output Mode Average Before Zap During Zap Average After Zap Deviation of Full Scale (ppm) Pass or Fail
Minimum Maximum
VOUT = 10 V 9.999341 V 9.997904 V 10.000008 V 9.999395 V −0.009%, 0.004% Pass, Criterion A
IOUT = 20 mA 19.960074 mA 19.959014 mA 19.962312 mA 19.960025 mA −0.007%, 0.014% Pass, Criterion A
Figure 8. IEC 61000-4-6 Test Setup Connection Diagram
Figure 9. IEC 61000-4-6 Test Setup Photograph
Figure 10. Voltage Output vs. Frequency, Below 20 V/m
Figure 11. Current Output vs. Frequency, Below 20 V/m
Figure 12. Voltage Output vs. Measurement Count, Before and After 20 V/m Conducted Susceptibility (CS)
Figure 13. Current Output vs. Measurement Count, Before and After 20 V/m CS

IMMUNITY TO ESD


The test setup consists of a nonconductive table with a height of 0.8 m, standing on the ground reference plane. A 1.6 m × 0.8 m horizontal coupling plane (HCP) is placed on the table. The EUT and its cable are isolated from the coupling plane by an insulating mat that is 0.5 mm thick.

The contact discharges are applied to the VIOUT and RETURN terminal screws of the AD5758 output terminal block (P4). The EUT is exposed to at least 20 discharges at each rating, 10 each at negative and positive polarity. The discharges are repeated at a rate of one discharge per second.

The air discharges are applied to the AD5758 output terminal block. The EUT is exposed to at least 20 discharges at each rating: 10 each at negative and positive polarity. The discharges are repeated at a rate of one discharge per second.

The coupling discharge are applied to the HCP and vertical coupling plane (VCP). The EUT is exposed to at least 20 discharges at each rating: 10 each at negative and positive polarity. The discharges are repeated at a rate of one discharge per second. The coupling plane has two 470 kΩ bleeding resistors to earth ground.

Table 5. IEC 61000-4-2 Test Levels and Results of ±6 kV Contact ESD
Test Level Output Mode Zap Point on P4 Before Zap After Zap Deviation of Full Scale (ppm) Pass or Fail
6 kV Contact Discharge VOUT = 10 V VIOUT terminal screw 9.999939 V 9.999964 V 3 Pass, Criterion B
VOUT = 10 V RETURN terminal screw 9.999946 V 9.999965 V 2 Pass, Criterion B
IOUT = 20 mA VIOUT terminal screw 19.961543 mA 19.961512 mA −2 Pass, Criterion B
IOUT = 20 mA RETURN terminal screw 19.961495 mA 19.961551 mA 3 Pass, Criterion B
−6 kV Contact Discharge VOUT = 10 V VIOUT terminal screw 9.998116 V 9.998157 V 4 Pass, Criterion B
VOUT = 10 V RETURN terminal screw 9.999761 V 9.999805 V 5 Pass, Criterion B
IOUT = 20 mA VIOUT terminal screw 19.961541 mA 19.961490 mA −3 Pass, Criterion B
IOUT = 20 mA RETURN terminal screw 19.961426 mA 19.961442 mA 1 Pass, Criterion B
Table 6. IEC 61000-4-2 Test Levels and Results of ±12 kV Air ESD
Test Level Output Mode Zap Point on P4 Before Zap After Zap Deviation of Full Scale (ppm) Pass or Fail
12 kV Air Discharge VOUT = 10 V VIOUT terminal block 9.999615 V 9.999612 V −1 Pass, Criterion B
IOUT = 20 mA VIOUT terminal block 19.960970 mA 19.960972 mA 1 Pass, Criterion B
−12 kV Air Discharge VOUT = 10 V VIOUT terminal block 9.999562 V 9.999572 V 1 Pass, Criterion B
IOUT = 20 mA VIOUT terminal block 19.960957 mA 19.961000 mA 2 Pass, Criterion B
Table 7. IEC 61000-4-2 Test Levels and Results of ±30 kV Coupling ESD
Test Level Output Mode Zap Point Before Zap After Zap Deviation of Full Scale (ppm) Pass or Fail
30 kV Coupling Discharge VOUT = 10 V Horizontal plane 10.000360 V 10.000379 V 2 Pass, Criterion B
VOUT = 10 V Vertical plane 10.000385 V 10.000371 V −2 Pass, Criterion B
IOUT = 20 mA Horizontal plane 19.961024 mA 19.960967 mA −3 Pass, Criterion B
IOUT = 20 mA Vertical plane 19.961045 mA 19.960978 mA −4 Pass, Criterion B
−30 kV Coupling Discharge VOUT = 10 V Horizontal plane 10.000398 V 10.000384 V -2 Pass, Criterion B
VOUT = 10 V Vertical plane 10.000387 V 10.000378 V −1 Pass, Criterion B
IOUT = 20 mA Horizontal plane 19.961049 mA 19.961004 mA −3 Pass, Criterion B
IOUT = 20 mA Vertical plane 19.961010 mA 19.960995 mA −1 Pass, Criterion B
Figure 14. IEC 61000-4-2 Test Setup Connection Diagram, Contact Discharge or Air Discharge
Figure 15. IEC 61000-4-2 Test Setup Connection Diagram, Coupling Discharge
Figure 16. IEC 61000-4-2 Test Setup Photograph
Figure 17. Voltage Output vs. Measurement Count, 6 kV ESD at VIOUT Terminal Screw
Figure 18. Voltage Output vs. Measurement Count, −6 kV ESD at VIOUT Terminal Screw
Figure 19. Voltage Output vs. Measurement Count, 6 kV ESD at RETURN Terminal Screw
Figure 20. Voltage Output vs. Measurement Count, −6 kV ESD at RETURN Terminal Screw
Figure 21. Current Output vs. Measurement Count, 6 kV ESD at VIOUT Terminal Screw
Figure 22. Current Output vs. Measurement Count, −6 kV ESD at VIOUT Terminal Screw
Figure 23. Current Output vs. Measurement Count, 6 kV ESD at RETURN Terminal Screw
Figure 24. Current Output vs. Measurement Count, −6 kV ESD at RETURN Terminal Screw
Figure 25. Voltage Output vs. Measurement Count, 12 kV Air ESD
Figure 26. Voltage Output vs. Measurement Count, −12 kV Air ESD
Figure 27. Current Output vs. Measurement Count, 12 kV Air ESD
Figure 28. Current Output vs. Measurement Count, −12 kV Air ESD
Figure 29. Voltage Output vs. Measurement Count, 30 kV HCP ESD
Figure 30. Voltage Output vs. Measurement Count, −30 kV HCP ESD
Figure 31. Voltage Output vs. Measurement Count, 30 kV VCP ESD
Figure 32. Voltage Output vs. Measurement Count, −30 kV VCP ESD
Figure 33. Current Output vs. Measurement Count, 30 kV HCP ESD
Figure 34. Current Output vs. Measurement Count, −30 kV HCP ESD
Figure 35. Current Output vs. Measurement Count, 30 kV VCP ESD
Figure 36. Current Output vs. Measurement Count, −30 kV VCP ESD

IMMUNITY TO ELECTRICAL FAST TRANSIENTS


Per the IEC 61000-4-4 standard, the EUT is tested with 4000 V discharges on the analog input cable. Positive and negative polarity discharges are applied. The length of the hot wire from the coaxial output of the EFT generator to the terminals on the EUT must not exceed 1 m. The duration time of each test sequential is 1 min. The transient and burst waveform is in accordance with IEC 61000-4-4, 5 ns rising time with 50 ns pulse width.

The configuration consists of a 0.8 m high wooden table, covered with a sheet of copper that is at least 0.25 mm thick, and connected to the protective grounding system. The EUT is placed on a 0.1 m thick isolating support. A minimum distance of 0.5 m is provided between the EUT and the walls of the laboratory.

Table 8. IEC 61000-4-4 Test Levels and Results of ±4 kV EFT
Test Level Output Mode Before Zap After Zap Deviation of
Full Scale (ppm)
Pass or Fail
4 kV EFT VOUT = 10 V 10.000216 V 10.000277 V 4 Pass, Criterion B
IOUT = 20 mA 19.960184 mA 19.960118 mA −5 Pass, Criterion B
−4 kV EFT VOUT = 10 V 10.000269 V 10.000254 V −1 Pass, Criterion B
IOUT = 20 mA 19.960140 mA 19.960190 mA 4 Pass, Criterion B
Figure 37. IEC 61000-4-4 Test Setup Connection Diagram
Figure 38. IEC 610004-4 Test Setup Photograph
Figure 39. Voltage Output vs. Measurement Count, 4 kV EFT
Figure 40. Voltage Output vs. Measurement Count, −4 kV EFT
Figure 41. Current Output vs. Measurement Count, 4 kV EFT
Figure 42. Current Output vs. Measurement Count, −4 kV EFT

IMMUNITY TO SURGE


Per the IEC 61000-4-5 standard for industrial environments, the surge is a combination wave of 1.2 μs rising time with 50 μs pulse width open circuit voltage and 8 μs rising time with 20 μs pulse width short-circuit current. The EUT is subject to five positive and five negative surges at each rating. The interval between each surge is 1 min. The surge is tested to the AD5758 output cable, which is treated as unshielded asymmetrically operated interconnection lines of the EUT. The surge is applied to the lines via capacitive coupling through CDN 174.

The CDNs do not influence the specified functional conditions of the EUT. The interconnection line between the EUT and the CDNs is 2 m in length or shorter.

Table 9. IEC 61000-4-5 Test Levels and Results
Test Level Output Mode Before Zap After Zap Deviation of
Full Scale (ppm)
Pass or Fail
4 kV Surge VOUT = 10 V 9.999588 V 9.999406 V −12 Pass, Criterion B
IOUT = 20 mA 19.960027 mA 19.960030 mA 1 Pass, Criterion B
−4 kV Surge VOUT = 10 V 9.999328 V 9.999389 V 4 Pass, Criterion B
IOUT = 20 mA 19.959943 mA 19.959980 mA 3 Pass, Criterion B
Figure 43. IEC 61000-4-5 Test Setup Connection Diagram
Figure 44. IEC 61000-4-5 Test Setup Photograph
Figure 45. Voltage Output vs. Measurement Count, Below 4 kV Surge
Figure 46. Voltage Output vs. Measurement Count, Below −4 kV Surge
Figure 47. Current Output vs. Measurement Count, Below 4 kV Surge
Figure 48. Current Output vs. Measurement Count, Below −4 kV Surge

RADIATED IMMUNITY


Per the IEC 61000-4-3 standard for industrial environments, the test is performed in a fully anechoic chamber. The EUT is placed on a 0.8 m high nonconductive table. A DMM, used as auxiliary equipment, is put in a shielded box under the table and probes the AD5758 output at the load resistor. The DMM measurement data is sent to the PC outside the chamber via an Ethernet cable. The transmit antenna is located 3 m from the EUT. The frequency range is swept from 80 MHz to 1000 MHz, and from 1000 MHz to 6000 MHz with the 80% signal amplitude modulated with a 1 kHz sine wave. The frequency range is swept incrementally, and the step size is 1% of the preceding frequency value. The dwell time at each frequency is 1 sec, which is not less than the time necessary for the EUT to respond. During this interval, the DMM is able to complete 20 measurements, which is adequate for calculating the error deviation. The field strength is 20 V/m in the 80 MHz to 1000 MHz range. The field strength for the 1000 MHz to 6000 MHz range is 10 V/m. The test is performed with the EUT exposed to a vertically and horizontally polarized field.

Table 10. IEC 61000-4-3 Test Levels and Results
Frequency Range Test Level Antenna Polarization Output Mode Average During Zap (Maximum) During Zap (Minimum) Deviation 0f Full Scale (%) Pass or Fail
80 MHz to 1000 MHz 20 V/m Horizontal VOUT = 10 V 9.999848 10.000866 9.998624 −0.013, 0.010 Pass, Criterion A
20 V/m Vertical VOUT = 10 V 9.999883 10.001688 9.998599 −0.012, 0.019 Pass, Criterion A
20 V/m Horizontal IOUT = 20 mA 19.996675 19.998610 19.994331 −0.012, 0.009 Pass, Criterion A
20 V/m Vertical IOUT = 20 mA 19.996793 20.000425 19.994738 −0.011, 0.018 Pass, Criterion A
1000 MHz to 6000 MHz 10 V/m Horizontal VOUT = 10 V 9.999852 10.000866 9.998709 −0.011, 0.010 Pass, Criterion A
10 V/m Vertical VOUT = 10 V 9.999827 10.000857 9.998649 −0.012, 0.010 Pass, Criterion A
10 V/m Horizontal IOUT = 20 mA 19.996832 19.998542 19.994976 −0.010 0.008 Pass, Criterion A
10 V/m Vertical IOUT = 20 mA 19.996822 19.998695 19.994976 −0.009, 0.010 Pass, Criterion A
Figure 49. IEC 61000-4-3 Test Setup Configuration Diagram
Figure 50. IEC 61000-4-3 Test Setup Photograph
Figure 51. Voltage Output vs. Frequency Below 20 V/m, Horizontal Antenna
Figure 52. Voltage Output vs. Frequency Below 10 V/m, Horizontal Antenna
Figure 53. Voltage Output vs. Frequency Below 20 V/m, Vertical Antenna
Figure 54. Voltage Output vs. Frequency Below 10 V/m, Vertical Antenna
Figure 55. Current Output vs. Frequency Below 20 V/m, Horizontal Antenna
Figure 56. Current Output vs. Frequency Below 10 V/m, Horizontal Antenna
Figure 57. Current Output vs. Frequency Below 20 V/m, Vertical Antenna
Figure 58. Current Output vs. Frequency Below 10 V/m, Vertical Antenna

RADIATED EMISSIONS


Per the CISPR 11 standard, the EUT is placed on top of a rotating table, 0.8 m above the ground, in a 10 m, semianechoic chamber. The table is rotated 360° to identify the position of the highest radiation. The EUT is set 10 m from the interference receiving antenna, which can be set to a horizontal or vertical polarization position. The antennas are mounted on top of a variable height antenna tower. The heights of the antennas vary from 1 m to 4 m above the ground to identify the maximum value of the field strength. The EUT is configured to its typical worst case where the antenna is tuned to a height from 1 m to 4 m, and the table is turned from 0° to 360° to find the maximum reading. The typical worst case for the EUT means that the AD5758 is being refreshed at 1 kHz at its full-scale voltage or current output. The test receiver system is set to quasipeak detection mode. The EUT is powered by two 24 V dc battery packs. Any radiated emission from the auxiliary supply can be excluded.

The AN-1599 describes the AD5758 EMC test board, which shares the same blank PCB of this AD5758 and ADP1031 EMC test board but is assembled with partially different BOM that implements the power and digital isolation with discrete ICs. The AD5758 EMC test board has emission peaks around 205 MHz, which does not satisfy the 6 dB margin against CISPR 11 Class B. The AD5758 and ADP1031 EMC test board in contrast is not only 10 dB lower around the frequencies but also has a very low emissions profile in the range of 30 MHz to 230 MHz where the CISPR 11 Class B limit is more stringent, mainly due to the higher integration and design optimizations of the ADP1031 for EMI.

Table 11. CISPR 11 Radiated Emissions at Critical Frequencies, VOUT = 10 V
Frequency (MHz) Result (dBμV) Limit (dBμV) Margin (dB) Height (cm) Degree (°) Antenna Polarity Remark
31.9400 21.68 30 −8.32 203 361 Vertical Peak detection
143.4900 17.49 30 −12.51 100 237 Vertical Peak detection
359.8000 22.33 37 −14.67 100 157 Vertical Peak detection
597.4500 26.28 37 −10.72 399 357 Vertical Peak detection
776.9000 28.95 37 −8.05 199 0 Vertical Peak detection
823.4600 29.54 37 −7.46 300 33 Vertical Peak detection
30.0000 21.85 30 −8.15 200 320 Horizontal Peak detection
330.7000 20.11 37 −16.89 101 213 Horizontal Peak detection
551.1200 24.43 37 −12.57 400 327 Horizontal Peak detection
680.8700 32.86 37 −4.14 101 287 Horizontal Peak detection
680.9500 27.16 37 −9.84 101 275 Horizontal Quasi peak
790.4800 29.98 37 −7.02 101 2 Horizontal Peak detection
914.6400 29.97 37 −7.03 300 362 Horizontal Peak detection
Table 12. CISPR 11 Radiated Emissions at Critical Frequencies, IOUT = 20 mA
Frequency (MHz) Result (dBμV) Limit (dBμV) Margin (dB) Height (cm) Degree (°) Antenna Polarity Remark
30.0000 22.93 30 −7.07 100 309 Vertical Peak detection
348.1600 22.97 37 −14.03 100 135 Vertical Peak detection
467.4700 23.96 37 −13.04 300 259 Vertical Peak detection
649.8300 27.43 37 −9.57 200 84 Vertical Peak detection
777.8700 29.40 37 −7.60 399 262 Vertical Peak detection
923.3700 29.20 37 −7.80 100 251 Vertical Peak detection
30.9700 21.34 30 −8.66 300 360 Horizontal Peak detection
356.8900 21.49 37 −15.51 300 241 Horizontal Peak detection
599.3900 26.73 37 −10.27 300 360 Horizontal Peak detection
681.5000 27.93 37 −9.07 101 183 Horizontal Quasi peak
683.7800 32.35 37 −4.65 101 243 Horizontal Peak detection
821.5200 28.78 37 −8.22 101 191 Horizontal Peak detection
889.4200 28.38 37 −8.62 400 221 Horizontal Peak detection
Figure 59. CISPR 11 Test Setup Configuration Diagram
Figure 60. CISPR 11 Radiated Emission Test Setup Photograph
Figure 61. Radiated Emission Level vs. Frequency, Horizontal Antenna Polarization, VOUT = 10 V
Figure 62. Radiated Emission Level vs. Frequency, Vertical Antenna Polarization, VOUT = 10 V
Figure 63. Radiated Emission Level vs. Frequency, Horizontal Antenna Polarization, IOUT = 20 mA
Figure 64. Radiated Emission Level vs. Frequency, Vertical Antenna Polarization, IOUT = 20 mA

EMC BOARD SCHEMATICS AND ARTWORK

Figure 65. AD5758 and ADP1031 EMC Test Board Schematics, System Power Supply and USB Communication Port
Figure 66. AD5758 and ADP1031 EMC Test Board Schematics, MCU and Periphery Circuit
Figure 67. AD5758 and ADP1031 EMC Test Board Schematics, Field Power Supply and Digital Isolation
Figure 68. AD5758 and ADP1031 EMC Test Board Schematics, AD5758 Periphery Circuit
Figure 69. Layer 1, Top Side
Figure 70. Layer 2, Inner Ground Plane
Figure 71. Layer 3, Inner Power Plane
Figure 72. Layer 4, Bottom Side
Figure 73. Silkscreen Top
Figure 74. Silkscreen Bottom

ORDERING INFORMATION

BILL OF MATERIALS


Table 13.
Reference Designator Part Description Part Number Manufacturer
C1, C2, C13, C17 Capacitor, ceramic, C0G (NP0), general-purpose, 20 pF GRM1885C1H200JA01D Murata
C3 to C7, C10, C14 to C16, C21, C23, C27 to C29, C32, C33, C35, C46, C52, C55, C64, C68, C80, C81, C117, C119 to C121, C128, C141 Capacitor, ceramic, X7R, 0603, 0.1 μF 06035C104KAT2A AVX
C175,C176,C177 Capacitor, ceramic, X7R, general-purpose, 0.01 μF GRM155R71E103KA01D Murata
C178 Capacitor, ceramic, NP0, general-purpose, 22 pF CC0402JRNPO9BN220 YAGEO
C122 Multilayer ceramic capacitor (MLCC) for high voltage, X7R, 3300 pF HV1812Y332KXHATHV Vishay
C9,C11 Capacitor, ceramic, X5R, general-purpose, 10 μF GRM31CR61H106KA12L Murata
C22, C24, C25, C30,C31, C45, C82, C118 MLCC, X5R, 4.7 μF C2012X5R1H475K125AB TDK
C8, C12 Capacitor, ceramic, 8.2 pF 06035A8R2CAT2A AVX
C39, C125 Capacitor, ceramic, X7R, high voltage, 0.001 μF C1812C102KHRACTU Kemet
C130 Capacitor, ceramic, X7R, soft termination, 0.01 μF C1608X7R1H103K080AE TDK
C53, C131, C133, C138, C142 to C144 Capacitor, ceramic, X7R, 0.01 μF GCM155R71H103KA55D Murata
C18, C19 Capacitor, ceramic, X7R, 0.47 μF C1608X7R1H474MT TDK
C26 MLCC, X5R, 10 μF C2012X5R1V106K085AC TDK
C34 Capacitor, ceramic, X7R, 2.2 μF UMK212BB7225KG-T Taiyo Yuden
C37, C44, C47 to C49, C54 Capacitor, ceramic, X7R, general-purpose, 2.2 μF GRM31CR71H225KA88L Murata
C38 Capacitor, ceramic, NP0, 220 pF CC0603JRNPO9BN221 Yageo
C40, C41, C95, C96 Capacitor, ceramic, NP0, 0.001 μF 12065A102JAT2A AVX
C50 Capacitor, ceramic, C0G (NP0), general-purpose, 0.002 μF GRM2165C1H202JA01D Murata
C56, C57 Capacitor, ceramic, X7R, general-purpose, 0.01 μF GCG188R71H103KA01D Murata
C62 Capacitor, ceramic, X5R, general-purpose, 4.7 μF GRM21BR61E475KA12L Murata
C63 Capacitor, ceramic, X7R, 1 μF 0603YC105KAT2A AVX
D4, D10 Diode, general-purpose, rectifier S2M ON Semiconductor
D5, D6, D11, D12 Diode, TVS, bidirectional SMCJ33CA-TR ST Microelectronics
D16 Diode, TVS, bidirectional SMAJ33CA-TR ST Microelectronics
D2 Diode, Schottky Rectifier BAT46W-7-F Diodes Incorporated
DS1, DS2, DS5, DS6 LED, SMD, 0603,green SML-LX0603GW-TR Lumex
DS3, DS4, DS7 LED, SMD, 0603, red TLMS1100-GS08 Vishay
E1, E2, E3, E4 Inductor, ferrite bead, 1 .5kΩ, 100 MHz BLM18HE152SN1D Murata
E5, R68, R166, R167 Resistor, thick film, chip, 1210, 0 Ω CRCW12100000Z0EAHP Vishay
FL1 Filter, EMI, common-mode, 30 dB, 0.1 A, 8 Ω EMI2121MTTAG ON Semiconductor
JP25, JP26 Connector, PCB, header jumper, 1 × M000385 22-03-2031 Molex
L1, L6, L8 Ferrite bead ,SMD, 120 Ω, 120 nH LI0805H750R-10 Laird
L2, L3 Inductor, power choke, 100 μH LPS5030-104MRB Coilcrft
L5 Inductor, shielded power, 47 μH LPS4018-473MRB Coilcraft
P1 Connector, PCB, header, low profile 5103308-5 TE Connectivity LTD
P2, P14 Connector, PCB, terminal block, two position, green 1727010 Phoenix Contact
P3 Connector, PCB, receptor, mini USB 2.0 UX60SC-MB-5S8 Hirose
P4 Connector, PCB, four position terminal block, single-row, straight, 2.54 mm pitch, 3.5 mm tail length 1725672 Phoenix Contact
P8, R1, R2, R14, R16 to R18, R60, R164, R170, R173 Resistor, thick film, chip, 0603, 0 Ω MC0603WG00000T5E-TC Multicomp
R9, R10, R36, R37, R143, R152, R154 R155 Resistor, thick film, chip, 0603, 10 kΩ MC0100W0603110K Multicomp
R19 to R21, R23, R24, R27 to R32, R47 to R54, R62 to R65 Resistor, thick film, chip, 0603, 100 Ω MC0.063W06031100R Multicomp
R3, R4, R11, R33, R61, R76, R77 Resistor, thick film, chip, 0603, 499 Ω ERJ-3EKF4990V Panasonic
R5 to R8, R12, R22, R25, R26, R34, R35, R38, R40 to R42, R66, R67, R74, R75, R141, R151, R163, R168, R171, R182 Resistor, thick film, chip, 0603, 100 kΩ ERJ-3EKF1003V Panasonic
R138 Resistor, thick film, chip, 0603, 1 MΩ ERJ-3EKF1004V Panasonic
R139 Resistor, thick film, chip, 0603, 210 kΩ ERJ-3EKF2103V Panasonic
R89 Resistor, thick film, chip, 0402, 0 Ω MC00625W040210R Multicomp
R13, R15, R92 to R94, R140, R142, R148 Resistor, thick film, chip, 0603, 33 Ω MC0.063W0603133R Multicomp
R43 Resistor, thick film chip, 0603, 31.6 kΩ ERJ-3EKF3162V Panasonic
R44, R46 Resistor, thick film, chip, 0603, 560 kΩ MC 0.063W 0603 1% 560K Multicomp
R45 Resistor, thick film, chip, 0603, 23.2 kΩ ERJ-3EKF2322V Panasonic
R56, R145 Resistor, thick film, chip, 0603, 1 kΩ MC0063W060311K Multicomp
R176, R177 Resistor, thin film, chip, 0805, 0 Ω MC0.1W08050R Multicomp
R180, R181 Resistor, thick film, chip, 0603, 2 kΩ MC0.063W060312K Multicomp
R55 Resistor, precision, thin film, 0603, 13.7 kΩ RN73C1J13K7BTG TE Connectivity
R57 Resistor, thick film, chip, 0805, 10 Ω ERJ-6ENF10R0V Panasonic
R58 Resistor, thick film, high voltage, chip, 4.7 MΩ CHV2010-JW-475ELF Bourns
S1 to S4 Switch, surface mount, SMT B3S1000 Omron
T1, T3 Common-mode choke, DLW5BS series, 190 Ω, 5 A DLW5BSN191SQ2L Murata
T2 Flyback transformer, 1:1 ratio, 280 μH, 250 mA 750316743 Würth Elektronik
U1 IC, ultra low power, Arm Cortex-M3, MCU ADuCM3029BCPZ Analog Devices
U11 IC, micropower, precision, series mode, voltage reference AD1582ARTZ Analog Devices
U13 IC, TTL, single, two input positive and gate SN74LVC1G08DBVT Texas Instruments
U2 IC, 3 V, 128 Mb, serial flash memory with dual/quad SPI and quick path interconnect (QPI) W25Q128FVSIG Winbond
U26 IC, TTL, single, two-input, positive and gate SN74AHCT1G08DCKR Texas Instruments
U3 IC, isolated micro power management unit and digital isolator, adjustable VOUT1, 5.15 V VOUT2, adjustable VOUT3 ADP1031ACPZ-1-R7 Analog Devices
U4 IC, single-channel, 16-bit, current/voltage output DAC, dynamic power control, HART connectivity AD5758BCPZ-REEL Analog Devices
U6 IC, low noise, CMOS, LDO regulator, 5 V voltage output ADP7142ARDZ-5.0 Analog Devices
U7 IC, USB, serial universal asynchronous receiver/transmitter (UART) FT232RQ FTDI
U8 IC, low quiescent current, CMOS linear regulator, 3.0 V voltage output ADP124ARHZ-3.0-R7 Analog Devices
U9 IC, micropower voltage reference, 2.5 V voltage output ADR3425ARJZ-R7 Analog Devices
Y1 IC, crystal, SMD, 12.5 pF, 32.7680 kHz MC-306-32.7680K- A0:ROHS Seiko
Y2 IC, crystal, ultraminiature ceramic sealed, 10 pF, 26.000 MHz ABM8G-26.000MHZ- B4Y-T Abracon

Author

Ke Li

Li Ke

Li Ke is a system applications engineer in the Automation and Energy Business Unit based in Limerick, Ireland. Ke joined Analog Devices in 2007 as a product applications engineer with the Precision Converters Group, located in Shanghai, China. Before this, he spent four years as an R&D engineer with the Chemical Analysis Group at Agilent Technologies. He received a master’s degree in biomedical engineering in 2003 and a bachelor’s degree in electric engineering in 1999, both from Xi’an Jiaotong University.