HMC-APH478-DIE
Obsolete
1 Watt Power Amplifier Chip, 18 - 20 GHz
Part Details
- Output IP3: +38.5 dBm
- P1dB: +30 dBm
- Gain: 17.5 dB
- Supply Voltage: +5V
- 50 Ohm Matched Input/Output
- Die Size: 3.92 x 1.28 x 0.1 mm
The HMC-APH478 is a two stage GaAs HEMT MMIC 1 Watt Power Amplifier which operates between 18 and 20 GHz. The HMC-APH478 provides 17.5 dB of gain, and an output power of +30 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifier device is fully passivated for reliable operation.
The HMC-APH478 GaAs HEMT MMIC 1 Watt Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Applications
- Point-to-Point Radios
- Point-to-Multi-Point Radios
- Military & Space
Suggested Replacement Parts
GaAs pHEMT MMIC 2 Watt Power Amplifier, 0.1 - 22 GHz
Documentation
Data Sheet 1
Application Note 3
Technical Articles 1
Product Selection Guide 1
This is the most up-to-date revision of the Data Sheet.
Tools & Simulations
Sys-Parameter Models for Keysight Genesys
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
Open ToolADIsimRF
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
Open ToolLatest Discussions
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