ADPA1113
RECOMMENDED FOR NEW DESIGNS2 GHz to 6 GHz, 46 dBm (40 W), GaN Power Amplifier
- Part Models
- 2
- 1ku List Price
- Starting From $603.36
Part Details
- Internally matched and AC-coupled, 40 W, GaN power amplifier
- Integrated drain bias inductor
- POUT: 46.5 dBm typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm)
- Small signal gain: 40.5 dB typical from 2.3 GHz to 5.7 GHz
- Power gain: 25.5 dB typical from 2.0 GHz to 5.7 GHz (PIN = 21 dBm)
- PAE: 39% typical from 2.3 GHz to 5.7 GHz
- VDD = 28 V at IDQ = 750 mA
- 14-lead ceramic leaded chip carrier [LDCC] with a copper-molybdenum base
The ADPA1113 is a gallium nitride (GaN), broadband power amplifier delivering 46.5 dBm (44.7 W) with 39.0% power added efficiency (PAE) from 2.3 GHz to 5.7 GHz. No external matching or AC-coupling are required to achieve full-band operation. Additionally, no external inductor is required to bias the amplifier.
The ADPA1113 is ideal for continuous wave applications, such as military jammers and radars.
APPLICATIONS
- Military jammers
- Commercial and military radars
- Test and measurement equipment
Documentation
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
---|---|---|---|
ADPA1113AEJZ | CER LEADED CHIP CARRIER | ||
ADPA1113AEJZ-50 | CER LEADED CHIP CARRIER |
This is the most up-to-date revision of the Data Sheet.