HMC930A-DIE
PRODUCTIONGaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz
- Part Models
- 2
- 1ku List Price
- price unavailable
Part Details
- High output power for 1 dB compression (P1dB): 22 dBm
- High saturated output power (PSAT): 24 dBm
- High gain: 13 dB
- High output third-order intercept (IP3): 33.5 dBm
- Supply voltage: 10 V at 175 mA
- 50 Ω matched input/output
- Die size: 2.82 mm × 1.50 mm × 0.1 mm
The HMC930A is a gallium arsenide (GaAs), pseudomorphic, high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from dc to 40 GHz. The HMC930A provides 13 dB of gain, 33.5 dBm output IP3, and 22 dBm of output power at 1 dB gain compression, requiring 175 mA from a 10 V supply. The HMC930A exhibits a slightly positive gain slope from 8 GHz to 32 GHz, making it ideal for electronic warfare (EW), electronic countermeasures (ECM), radar, and test equipment applications. The HMC930A amplifier inputs/outputs (I/Os) are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length at 0.31 mm (12 mils).
Applications
- Test instrumentation
- Microwave radios and VSATs
- Military and space
- Telecommunications infrastructure
- Fiber optics
Documentation
Data Sheet 1
Application Note 3
Product Selection Guide 1
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
---|---|---|---|
HMC930A | CHIPS OR DIE | ||
HMC930A-SX | CHIPS OR DIE |
This is the most up-to-date revision of the Data Sheet.
Hardware Ecosystem
Parts | Product Life Cycle | Description |
---|---|---|
HMC5805A | RECOMMENDED FOR NEW DESIGNS | GaAs pHEMT MMIC 0.25 Watt Power Amplifier, DC - 40 GHz |
Tools & Simulations
Sys-Parameter Models for Keysight Genesys
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
Open ToolS-Parameter 1
ADIsimRF
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
Open ToolLatest Discussions
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