HMC1132PM5E
PRODUCTION27 GHz to 32 GHz, GaAs, pHEMT, MMIC Power Amplifier
- Part Models
- 2
- 1ku List Price
- price unavailable
Part Details
- PSAT: 29.5 dBm
- High output IP3: 37 dBm
- High gain: 24 dB (typical) at 29 GHz to 32 GHz
- DC supply: 5 V at 600 mA
- 50 Ω matched input/output
- 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2
The HMC1132PM5E is a four-stage, gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC) power amplifier. The device operates from 27 GHz to 32 GHz, providing 24 dB of gain and 29.5 dBm of saturated output power from a 5 V power supply.
The HMC1132PM5E exhibits excellent linearity with high output third-order intercept (IP3) of 37 dBm, and it is optimized for high capacity, point to point and point to multipoint radio systems. The amplifier configuration and high gain make the HMC1132PM5E an ideal candidate for last stage signal amplification before the antenna.
The HMC1132PM5E amplifier input/outputs (I/Os) are internally matched to 50 Ω. The device is housed in a RoHS compliant, premolded cavity, 5 mm × 5 mm LFCSP package, making the device compatible with high volume surface-mount technology (SMT) assembly equipment.
APPLICATIONS
- Point-to-point radios
- Point-to-multipoint radios
- Very small aperture terminals (VSATs) and satellite communication (SATCOM)
- Military and space
Documentation
Data Sheet 1
Application Note 2
Product Selection Guide 1
Webcast 1
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
---|---|---|---|
HMC1132PM5E | 32-Lead LFCSP (5mm x 5mm w/ EP) | ||
HMC1132PM5ETR | 32-Lead LFCSP (5mm x 5mm w/ EP) |
Part Models | Product Lifecycle | PCN |
---|---|---|
Mar 19, 2021 - 20_0308 Epoxy Change at ASE Chungli Branch for PM5E and ACGZN Packages |
||
HMC1132PM5E | PRODUCTION | |
HMC1132PM5ETR | PRODUCTION |
This is the most up-to-date revision of the Data Sheet.
Tools & Simulations
S-Parameter 1
Sys-Parameter Models for Keysight Genesys
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
Open ToolADIsimRF
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
Open Tool