HMC1126-Die
RECOMMENDED FOR NEW DESIGNSGaAs, pHEMT, MMIC, Power Amplifier, 2 GHz to 50 GHz
- Part Models
- 2
- 1ku List Price
- Starting From $121.23
Part Details
- Output power for 1 dB compression (P1dB): 17.5 dB typical
- Saturated output power (PSAT): 21 dBm typical
- Gain: 11 dB typical
- Output third-order intercept (IP3): 28 dBm typical
- Supply voltage: 5 V at 65 mA
- 50 Ω matched input/output
- Die size: 2.3 mm × 1.45 mm × 0.05 mm
The HMC1126 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 2 GHz to 50 GHz. The HMC1126 provides 11 dB of gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dB gain compression, while requiring 65 mA from a 5 V supply.
The HMC1126 amplifier inputs/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
APPLICATIONS
Documentation
Data Sheet 1
Application Note 1
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC1126 | CHIPS OR DIE | ||
| HMC1126-SX | CHIPS OR DIE |
This is the most up-to-date revision of the Data Sheet.
Software Resources
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S-Parameter 1
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