HMC-APH634-DIE
ObsoleteMedium Power Amplifier Chip, 81 - 86 GHz
Part Details
- High Gain: 12 dB
- High P1dB: +19 dBm
- Supply Voltage: +4V
- 50 Ohm Matched Input/Output
- Die Size: 2.57 x 1.70 x 0.05 mm
The HMC-APH634 is a two stage GaAs HEMT MMIC Medium Power Amplifier which operates between 81 and 86 GHz. The HMC-APH634 provides 12 dB of gain, and an output power of up to +20 dBm at 1 dB compression from a +4V supply. All bond pads and the die backside are Ti/Au metallized. The HMC-APH634 GaAs HEMT MMIC Medium Power Amplifier is compatible with conventional die attach methods, as well as thermocompression and thermosonic wire bonding, making it ideal for MCM and hybrid microcircuit applications. All data shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.
Applications
- Short Haul / High Capacity Links
- Test & Measurement
- E-Band Communication Systems
Documentation
Data Sheet 1
Application Note 2
Product Selection Guide 1
This is the most up-to-date revision of the Data Sheet.
Hardware Ecosystem
| Parts | Product Life Cycle | Description |
|---|---|---|
| HMC8142 | RECOMMENDED FOR NEW DESIGNS | 81 GHz to 86 GHz, E-Band Power Amplifier with Power Detector |
Tools & Simulations
S-Parameter 1
Sys-Parameter Models for Keysight Genesys
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
Open ToolADIsimRF
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
Open ToolLatest Discussions
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