HMC1114LP5DE

Obsolete

10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz

Data Sheet (Rev. A) Product Selection Table

Part Models: 1
1ku List Price: price unavailable

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Part Details

High saturated output power (P_SAT): 41.5 dBm typical
High small signal gain: 35 dB typical
High power gain for saturated output power: 25.5 dB typical
Bandwidth: 2.7 GHz to 3.8 GHz
High power added efficiency (PAE): 54% typical
High output IP3: 44 dBm typical
Supply voltage: V_DD = 28 V at 150 mA
32-lead, 5 mm × 5 mm LFCSP_CAV package

Part Models: 1
1ku List Price: price unavailable

Documentation

Data Sheet 1

HMC1114: 10 Watt, GaN Power Amplifier, 2.7 GHz to 3.8 GHz Data Sheet (Rev.A) 11/05/2015

Application Note 2

AN-1363: Meeting Biasing Requirements of Externally Biased RF/Microwave Amplifiers with Active Bias Controllers 05/13/2020

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.

Part Model	Pin/Package Drawing	Documentation	CAD Symbols, Footprints, and 3D Models
HMC1114LP5DETR	32-Lead LFCSP_CAV (5mm x 5mm w/ EP)	Material Declaration Reliablity Data	Ultra Librarian SamacSys

Part Models	Product Lifecycle	PCN

Oct 30, 2018 - 18_0034 Discontinuance of Model Numbers: HMC1132LP5DE, HMC943ALP5DE, HMC1114LP5DE, HMC8500LP5DE and HMC1099LP5DE
		PDN18_0034_Form Material_Report
HMC1114LP5DETR	Obsolete	PDN18_0034_Form Material_Report

This is the most up-to-date revision of the Data Sheet.

Hardware Ecosystem

Parts	Product Life Cycle	Description
HMC1114PM5E		>10 W (42 dBm), 2.7 GHz to 3.8 GHz, GaN Power Amplifier

Tools & Simulations

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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S-Parameter 1

HMC1114LP5DE S-Parameters

ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Evaluation Kits

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

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Features and Benefits

Complete Bias Control and Sequencing Solution for Pulsed GaN Radar Power Amplifiers
Pin Compatible with ADI's existing Pulser Board and with ADI's GaN Power Amplifier Evaluation Boards
Operation in Drain Pulsed Mode or Gate Pulsed Mode
Optional Crowbar Circuit for Fast Turn Off in Drain Pulsed Mode
Single 24 V to 50 V Power Supply with on-board Negative Gate Voltage Generation.
Drain Current Monitoring Circuit

Product Details

Pulser Plus is a reference design for biasing Gallium Nitride RF Power Amplifiers. It plugs directly into Analog Devices’ GaN PA evaluation boards such as ADPA1106 and ADPA1107. The only input signals required to control and operate the board are a power supply voltage between 24 V and 50V and a 0V/3V signal on the Drain Pulse Enable or Gate Pulse Enable digital inputs.

Pulser Plus was specifically designed to enable fast pulsing of GaN Radar Power Amplifiers. It can support RF pulses as short as 1us and with rise and fall times of less than 100 ns in both Drain Pulsed mode and Gate Pulsed Mode.