ADPA9007-2
RECOMMENDED FOR NEW DESIGNSDC to 28 GHz, GaAs, pHEMT, 2 W Power Amplifier
- Part Models
- 2
- 1ku List Price
- price unavailable
Part Details
- Wideband, internally matched, RF power amplifier
- DC-coupled input and output
- Integrated RF power detector
- Integrated temperature sensor
- Gain: 13 dB typical at 8 GHz to 16 GHz
- OP1dB: 32.5 dBm typical at 8 GHz to 16 GHz
- PSAT: 33.5 dBm typical at 8 GHz to 16 GHz
- OIP3: 43.5 dBm typical at 8 GHz to 16 GHz
The ADPA9007-2CHIP is a 2 W, RF power amplifier that operates from DC to 28 GHz. The RF input and output are internally matched and DC-coupled. The ADPA9007-2CHIP includes an integrated temperature-compensated RF power detector and an integrated temperature sensor.
The ADPA9007-2CHIP amplifier provides a gain of 13 dB, an output power for 1 dB compression (OP1dB) of 32.5 dBm, and an output third-order intercept (OIP3) of 43.5 dBm from 8 GHz to 16 GHz. The amplifier operates from a typical supply voltage (VDD) of 15 V and has a 500 mA typical quiescent drain current (IDQ), which is adjustable.
The ADPA9007-2CHIP is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process and is specified for operation from −55°C to +85°C.
APPLICATIONS
- Electronic warfare
- Radar
- Test and measurement equipment
Documentation
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| ADPA9007-2C-SX | CHIPS OR DIE | ||
| ADPA9007-2CHIP | CHIPS OR DIE |
This is the most up-to-date revision of the Data Sheet.
Tools & Simulations
S-Parameter 1
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