ADPA1116
RECOMMENDED FOR NEW DESIGNS0.3 GHz to 6 GHz, 39.5 dBm, GaN Power Amplifier
- Part Models
- 2
- 1ku List Price
- Starting From $248.10
Part Details
- Internally matched, 0.3 GHz to 6 GHz, 39.5 dBm, GaN power amplifier
- RF input and RF output AC-coupled
- Integrated drain bias inductors
- Output power: 39.5 dBm typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm)
- Power gain: 23.5 dB typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm)
- PAE: 40% typical from 0.5 GHz to 5 GHz (PIN = 16.0 dBm)
- Small signal gain: 33.5 dB typical from 0.5 GHz to 5 GHz
- Supply voltage: 28 V
- Quiescent current: 300 mA
The ADPA1116 is a 0.3 GHz to 6 GHz power amplifier with a saturated output power (POUT) of 39.5 dBm, power added efficiency (PAE) of 40%, and a power gain of 23.5 dB typical from 0.5 GHz to 5 GHz at an input power (PIN) of 16.0 dBm. The RF input and RF output are internally matched and AC-coupled. A drain bias voltage of 28 V is applied to the VDD1 and VDD2 pins, which have integrated bias inductors. The drain current is set by applying a negative voltage to the VGG1 pin.
The ADPA1116 is fabricated on a gallium nitride (GaN) process, is housed in a 32-lead lead frame chip scale package, premolded cavity [LFCSP_CAV], and is specified for operation from −40°C to +85°C.
Documentation
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
---|---|---|---|
ADPA1116ACGZN | 32-Lead LFCSP (5mm x 5mm w/ EP) | ||
ADPA1116ACGZN-R7 | 32-Lead LFCSP (5mm x 5mm w/ EP) |
This is the most up-to-date revision of the Data Sheet.