ADH8400S
PRODUCTIONAerospace, GaAs, pHEMT, MMIC, Low Noise Amplifier, 2 GHz to 30 GHz
- Part Models
- 1
- 1ku List Price
- Starting From $728.00
Part Details
- Output power for 1 dB compression (OP1dB): 14.5 dBm Typ
- Saturated output power (PSAT): 17 dBm Typ
- Gain: 13.5 dB Typ
- Noise figure 2 dB
- Output third order intercept (OIP3): 26.5 dBm Typ
- Supply voltage: 5 V @ 67 mA
- 50 Ω matched input/output
- Die size: 2.720 mm × 1.370 mm × 0.0508 mm
- Screened in accordance with MIL-PRF-38534, Class K
The ADH8400S is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). The ADH8400S is a wideband low noise amplifier that operates between 2 GHz and 30 GHz. The amplifier provides 13.5 dB of gain, a 2 dB noise figure, and 26.5 dBm OIP3, and 14.5 dBm OP1dB, requiring 67 mA from a 5 V supply. The ADH8400S is self-biased with only a single positive supply needed to achieve a drain current IDD of 67 mA. The ADH8400S also has a gain control option, VGG2. The ADH8400S amplifier input/outputs are internally matched to 50 Ω and dc blocked, facilitating integration into multichip modules (MCMs).
Applications
- Test instrumentation
- Microwave radios
- Telecommunications infrastructure
- Military and space
Documentation
Application Note 1
Controlled Drawings 1
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC8743 | CHIPS OR DIE |
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