ADH1126S
RECOMMENDED FOR NEW DESIGNSAerospace, GaAs, pHEMT, MMIC, Power Amplifier, 2 GHz – 50 GHz
- Part Models
- 1
- 1ku List Price
- Starting From $696.00
Part Details
- Output Power for 1 dB Compression (OP1dB): 17.5 dB Typ.
- Saturated Output Power (PSAT): 21 dBm Typ.
- Gain: 11 dB Typ.
- Output Third-Order Intercept (OIP3): +28 dBm Typ.
- Supply Voltage: +5 V @ 65 mA
- 50 Ω matched Input/Output.
- Die Size: 2.3 mm X 1.45 mm X 0.05 mm
- Screened in accordance with MIL-PRF-38534, Class K
The ADH1126S is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 2 GHz to 50 GHz. The ADH1126S provides 11 dB of gain, 28 dBm output IP3, and 17.5 dBm of output power at 1 dB gain compression, while requiring 65 mA from a 5 V supply.
The ADH1126S amplifier inputs/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs).
Applications
- Instrumentation
- Microwave Communications
- Military & Space
Documentation
Application Note 1
Controlled Drawings 1
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC8659 | CHIPS OR DIE |
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