HMC8500LP5DE

Obsolete

>10 W, 0.01 GHz to 2.8 GHz, GaN Power Amplifier

Data Sheet (Rev. A) Product Selection Table
Part Models
2
1ku List Price
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Part Details

  • High small signal gain: 16.0 dB
  • High PAE: 55% typical
  • Instantaneous bandwidth: 0.01 GHz to 2.8 GHz
  • Supply voltage: VDD = 28 V at 100 mA
  • Internal prematching
    • Simple and compact external tuning for optimal performance
  • 32-lead, 5 mm × 5 mm, LFCSP package
HMC8500LP5DE
>10 W, 0.01 GHz to 2.8 GHz, GaN Power Amplifier
HMC8500 Functional Block Diagram HMC8500 Pin Configuration HMC8500 Circuit Diagram
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Documentation

Data Sheet 1

Application Note 1

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Hardware Ecosystem

Parts Product Life Cycle Description
HMC8500PM5E
10 W (40 dBm), 0.01 GHz to 2.8 GHz, GaN Power Amplifier
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Tools & Simulations

S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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Evaluation Kits

eval board
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ADPULSERPLUSEBZ

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

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Features and Benefits

  • Complete Bias Control and Sequencing Solution for Pulsed GaN Radar Power Amplifiers
  • Pin Compatible with ADI's existing Pulser Board and with ADI's GaN Power Amplifier Evaluation Boards
  • Operation in Drain Pulsed Mode or Gate Pulsed Mode
  • Optional Crowbar Circuit for Fast Turn Off in Drain Pulsed Mode
  • Single 24 V to 50 V Power Supply with on-board Negative Gate Voltage Generation.
  • Drain Current Monitoring Circuit

Product Details

Pulser Plus is a reference design for biasing Gallium Nitride RF Power Amplifiers. It plugs directly into Analog Devices’ GaN PA evaluation boards such as ADPA1106 and ADPA1107. The only input signals required to control and operate the board are a power supply voltage between 24 V and 50V and a 0V/3V signal on the Drain Pulse Enable or Gate Pulse Enable digital inputs.

Pulser Plus was specifically designed to enable fast pulsing of GaN Radar Power Amplifiers. It can support RF pulses as short as 1us and with rise and fall times of less than 100 ns in both Drain Pulsed mode and Gate Pulsed Mode.

eval board
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EVAL-HMC8500

LAST TIME BUY. See EVAL-HMC8500PM5E.

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Product Details

The HMC8500 evaluation board is a 2-layer board fabricated using Rogers 4350 and using best practices for high frequency RF design. The RF input and RF output traces have a 50 Ω characteristic impedance. The board is attached to a heatsink using an electrically and thermally conductive epoxy providing a low thermal and low dc resistance path. Components are mounted using SN63 solder allowing rework of the surface mount components without compromising the circuit board to heatsink attachment.

The evaluation board and populated components are designed to operate over the ambient temperature range of −40°C to +85°C. During operation, attach the evaluation board to a temperature controlled plate to control the temperature of the HMC8500 during operation. For the proper bias sequence, see the Applications Information section of the data sheet.
ADPULSERPLUSEBZ
Pulser Plus Reference Design for GaN PA Biasing and Sequencing
ADPULSERPLUSEBZ Angle View ADPULSERPLUSEBZ Bottom View ADPULSERPLUSEBZ Top View ADPULSERPLUSEBZ Pulser Plus Block Diagram ADPULSERPLUSEBZ Drain Pulsed Mode Block Diagam
EVAL-HMC8500
LAST TIME BUY. See EVAL-HMC8500PM5E.
EVIHMC8500LP5DE (angle) EVIHMC8500LP5DE (top) EVIHMC8500LP5DE (bottom)

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