HMC8415

RECOMMENDED FOR NEW DESIGNS

40 W (46 dBm), 9 GHz to 10.5 GHz, GaN Power Amplifier

Data Sheet (Rev. A) Product Selection Table
Part Models
3
1ku List Price
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Part Details

  • High output power: 46 dBm typical at PIN = 23 dBm
  • High small signal gain: 32.5 dB typical
  • High power gain: 23 dB typical at PIN = 23 dBm
  • Frequency range: 9 GHz to 10.5 GHz
  • High power added efficiency: 40% typical at PIN = 23 dBm
  • Supply voltage: VDDxA/VDDxB = 28 V at 1000 mA
  • 6 mm × 6 mm, 40-lead LFSCP
HMC8415
40 W (46 dBm), 9 GHz to 10.5 GHz, GaN Power Amplifier
HMC8415LP6GE Functional Block Diagram HMC8415LP6GE Pin Configuration
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Documentation

Data Sheet 1

Application Note 2

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Tools & Simulations

S-Parameter 1

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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ADIsimRF

ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.

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Evaluation Kits

eval board
schematic 1
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ADPULSERPLUSEBZ

Pulser Plus Reference Design for GaN PA Biasing and Sequencing

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Features and Benefits

  • Complete Bias Control and Sequencing Solution for Pulsed GaN Radar Power Amplifiers
  • Pin Compatible with ADI's existing Pulser Board and with ADI's GaN Power Amplifier Evaluation Boards
  • Operation in Drain Pulsed Mode or Gate Pulsed Mode
  • Optional Crowbar Circuit for Fast Turn Off in Drain Pulsed Mode
  • Single 24 V to 50 V Power Supply with on-board Negative Gate Voltage Generation.
  • Drain Current Monitoring Circuit

Product Details

Pulser Plus is a reference design for biasing Gallium Nitride RF Power Amplifiers. It plugs directly into Analog Devices’ GaN PA evaluation boards such as ADPA1106 and ADPA1107. The only input signals required to control and operate the board are a power supply voltage between 24 V and 50V and a 0V/3V signal on the Drain Pulse Enable or Gate Pulse Enable digital inputs.

Pulser Plus was specifically designed to enable fast pulsing of GaN Radar Power Amplifiers. It can support RF pulses as short as 1us and with rise and fall times of less than 100 ns in both Drain Pulsed mode and Gate Pulsed Mode.

EVAL-HMC8415

HMC8415 Evaluation Board

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Product Details

The EV1HMC8415LP6G evaluation board consists of a two layer PCB fabricated from 10 mil thick Rogers 4350B copper clad or equivalent, mounted to an aluminum heat spreader. The heat spreader assists in providing thermal relief to the part as well as mechanical support to the PCB. Mounting holes on the heat spreader allow it to be easily attached to larger heat sinks for improved thermal management. The RFIN and RFOUT ports are populated by 2.9 mm female coaxial connectors and their respective RF traces are of 50 ohm characteristic impedance. The board is populated with components suitable for use over the entire Operating Temperature range of the part. Because the HMC8415LP6GE is intended for pulsed DC bias operation, a separate drain pulser PCB is provided to simplify evaluation without the need to create a custom pulser. The drain pulser PCB has four layers and is fabricated from Isola 370HR or equivalent. For information regarding the required connections, DC biasing via the drain pulser, and typical performances, refer to the HMC8415LP6GE data sheet.
ADPULSERPLUSEBZ
Pulser Plus Reference Design for GaN PA Biasing and Sequencing
ADPULSERPLUSEBZ Angle View ADPULSERPLUSEBZ Bottom View ADPULSERPLUSEBZ Top View ADPULSERPLUSEBZ Pulser Plus Block Diagram ADPULSERPLUSEBZ Drain Pulsed Mode Block Diagam
EVAL-HMC8415
HMC8415 Evaluation Board

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