ADPA7005
RECOMMENDED FOR NEW DESIGNS18 GHz to 44 GHz, GaAs, pHEMT, 32 dBm (>1 W), MMIC Power Amplifier
- Part Models
- 4
- 1ku List Price
- Starting From $148.22
Part Details
ADPA7005AEHZ
- Output P1dB: up to 31 dBm typical
- PSAT: up to 32 dBm typical
- Gain: up to 15.5 dB typical
- Output IP3: up to 42.5 dBm typical
- Supply voltage: 5 V at 1400 mA
- 50 Ω matched input/output
- 18-terminal, 7 mm × 7 mm LCC_HS package
- Integrated power detector
ADPA7005CHIP
- Output P1dB: 30.5 dBm typical at 22 GHz to 34 GHz
- PSAT: 32 dBm typical at 22 GHz to 34 GHz
- Gain: 17 dB typical at 22 GHz to 34 GHz
- Output IP3: 41 dBm typical at 22 GHz to 34 GHz
- Supply voltage: 5 V at 1200 mA
- 50 Ω matched input/output
- Die size: 3.75 mm × 3.47 mm × 0.1 mm
ADPA7005AEHZ
The ADPA7005 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), 32 dBm saturated output power (PSAT), >1 W, power amplifier, with an integrated temperature compensated, on-chip power detector that operates between 18 GHz and 44 GHz. The ADPA7005 provides 15.5 dB of small signal gain and approximately 32 dBm of PSAT at 32 GHz from a 5 V supply (see Figure 26 in the data sheet). The ADPA7005 has an output IP3 of 40 dBm between 24 GHz to 34 GHz and is ideal for linear applications such as electronic countermeasure and instrumentation applications requiring >30 dBm of efficient PSAT. The RF input and outputs are internally matched and dc blocked for ease of integration into higher level assemblies. The ADPA7005 is packaged in a 7 mm × 7 mm, 18‑terminal ceramic leadless chip carrier with heat sink (LCC_HS) that exhibits low thermal resistance and is compatible with surface-mount manufacturing techniques.
ADPA7005CHIP
The ADPA7005CHIP is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates from 20 GHz to 44 GHz. The amplifier provides 17 dB of small signal gain, 30.5 dBm output power for 1 dB compression (P1dB), and a typical output third-order intercept (IP3) of 41 dBm. The ADPA7005CHIP requires 1200 mA from a 5 V supply on the supply voltage (VDD) and features inputs and outputs that are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm wire bonds that are at least 0.31 mm long.
Applications
- Military and space
- Test instrumentation
- Communications
Documentation
Data Sheet 2
User Guide 1
Application Note 3
Product Selection Guide 1
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
---|---|---|---|
ADPA7005AEHZ | 18-Lead LCC (7mm x 7mm x 1.32mm w/EP) | ||
ADPA7005AEHZ-R7 | 18-Lead LCC (7mm x 7mm x 1.32mm w/EP) | ||
ADPA7005C-KIT | CHIPS OR DIE | ||
ADPA7005CHIP | CHIPS OR DIE |
Part Models | Product Lifecycle | PCN |
---|---|---|
Jun 9, 2023 - 23_0062 ADPA7005 Die and Data Sheet Revision |
||
ADPA7005CHIP | PRODUCTION |
This is the most up-to-date revision of the Data Sheet.
Tools & Simulations
S-Parameter 2
Sys-Parameter Models for Keysight Genesys
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
Open ToolADIsimRF
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
Open Tool