ADRF5010
ADRF5010
推荐新设计使用Silicon SPST Switch, NonReflective, 100 MHz to 55 GHz
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产品详情
- Ultrawideband Frequency range: 0.1 GHz to 55 GHz
- Nonreflective ports, High power terminated path
- Symmetrical ports
- Low insertion loss
- 1.0 dB typical to 20 GHz
- 1.5 dB typical to 40 GHz
- 2.0 dB typical to 55 GHz
- Isolation
- 30 dB typical to 50 GHz
- 28 dB typical to 55 GHz
- High input linearity
- P0.1dB: >33 dBm typical
- Input IP3 >60 dBm typical
- High power handling Tcase= 85 °C
- Through path
- Peak: 36 dBm
- Pulse: 33 dBm
- CW: 30 dBm
- Through path
- Terminated path
- Peak: 33 dBm
- Pulse 33 dBm
- CW: 30 dBm
- Hot switching
- Peak: 33 dBm
- Pulse: 33 dBm
- CW: 30 dBm
- CMOS/LVTTL compatible
- RF switching time: 30 ns
- RF settling time (0.1 dB final RF output): 50 ns
- Dual supply operation: ±3.3 V
- 14-lead, 2.25 mm x 2.25 mm, LGA package
The ADRF5010 is a non-reflective, single-pole single-throw (SPST) switch manufactured in the silicon process.
The ADRF5010 operates from 0.1 GHz to 55 GHz with insertion loss of lower than 2 dB and isolation of higher than 28 dB. The device has a RF input power handling capability of 30 dBm for through path and 30 dBm for hot switching.
The ADRF5010 requires dual supply voltages of ±3.3 V. The device employs CMOS and LVTTL compatible control.
The ADRF5010 can also operate with a single positive supply voltage (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance is maintained while the switching characteristics, linearity, and power handling performance is derated.
The ADRF5010 comes in a 14-lead, 2.25 mm x 2.25 mm, land grid array [LGA] package and can operate from -40°C to +105°C.
APPLICATIONS
- Test and instrumentation
- Cellular infrastructure: 5G mmWave
- Military radios, radars, electronic counter measures
- Microwave radios and very small aperture terminals
- Industrial scanners
参考资料
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