機能と利点
- High-Density Optimized Design
- 3x3 Low RDSON Power MOS
- 12-Layer Layout
- Hot Swap and Bias Power Supply Already Implemented
- Highly Efficient Solution
- Low-Profile Inductors Optimized for STC Resonant Application
- No Transformers Required
- Resonant ZCS (Zero-Current Switching) with Adaptative Algorithm
- Cost-Effective Solution
- Low-ESR, Low-Cost Capacitors (No Low-Value, Low-Tolerance U2J Ceramic Capacitors have been used)
- Integrated Gate Driving
- Integrated Floating Power Supply for All 10 Power FETs
- No Heat Sink is Required (Air Flow Only for Higher TDP)
- Protection Features
- Input Peak Overcurrent Protection
- Output Overvoltage Protection with SOAR Mitigation
- Input Overvoltage Protection
- Bias and Gate Driving Undervoltage Lockout
- Fault Flag Open Collector Signal Pin
- Power-Good Signal
- High-Current Output Connector Compatible with Maxim Second Stage Solution EV Kit
- Output Adapter Board Available for a Stand-Alone Test Bench Use
- Proven PCB Layout
- Fully Assembled and Tested