HMC907
製造中止HMC907 / HMC907LP5E
Half-Watt Power Amplifier Chip or SMT, 0.2 GHz to 22 GHz
製品の詳細
- P1dB output power: +26 dBm, +27 dBm
- Gain: 12 dB, 14 dB
- Output IP3: +36 dBm, +38 dBm
- Supply voltage: +10 V at 350 mA
- 50 Ω matched input/output
- Die size: 2.91 × 1.33 × 0.1 mm
- 32-lead, 5 × 5 mm, surface-mount technology (SMT) package
The HMC907 devices are GaAs, monolithic microwave integrated circuit (MMIC), PHEMT distributed power amplifiers which operate between 0.2 GHz and 22 GHz. These self-biased power amplifiers provide 12 dB and 14 dB of gain, +36 dBm or +38 dBm of output IP3, and +26 dBm or +27 dBm of output power at 1 dB gain compression, while requiring only 350 mA from a +10 V supply. Gain flatness is excellent at +0.6 dB or +0.7 dB from 0.2 GHz to 22 GHz, making these devices ideal for EW, ECM, radar, and test equipment applications. The inputs/outputs of these devices are internally matched to 50 Ω for ease of integration into multichip modules (MCMs). The half-watt power amplifier SMT is packaged in a leadless, QFN, 5 × 5 mm, surface-mount package and requires no external matching components. All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal 0.31 mm (12 mils) length.
Applications
- Test instrumentation
- Microwave radio and VSAT
- Military and space
- Telecom infrastructure
- Fiber optics
ドキュメント
品質関連資料 3
テープ＆リール仕様 1
これは最新改訂バージョンのデータシートです。
ハードウェア・エコシステム
| 製品モデル | 製品ライフサイクル | 詳細 |
|---|---|---|
| HMC907APM5E | GaAs pHEMT MMIC パワー・アンプ、0.2 GHz ～ 22 GHz | |
| HMC907A-Die | GaAs pHEMT MMIC Power Amplifier, 0.2 - 22 GHz |
ツールおよびシミュレーション
評価用キット
HMC907LP5E Evaluation Board