HMC930-DIE
Obsolete0.25 Watt Power Amplifier Chip, DC - 40 GHz
Part Details
- High P1dB Output Power: 22 dBm
- High Psat Output Power: 24 dBm
- High Gain: 13 dB
- High Output IP3: +33.5 dBm
- Supply Voltage: +10 V @ 175 mA
- 50 Ohm matched Input/Output
- Die Size: 2.82 x 1.50 x 0.1 mm
The HMC930 is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 40 GHz. The amplifier provides 13 dB of gain, 33.5 dBm output IP3 and +22 dBm of output power at 1 dB gain compression while requiring 175 mA from a +10 V supply. The HMC930 exhibits a slightly positive gain slope from 8 to 32 GHz, making it ideal for EW, ECM, Radar and test equipment applications. The HMC930 amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils).
Applications
- Test Instrumentation
- Microwave Radio & VSAT
- Military & Space
- Telecom Infrastructure
- Fiber Optics
Suggested Replacement Parts
Documentation
Obsolete Data Sheet 1
This is the most up-to-date revision of the Data Sheet.
Hardware Ecosystem
| Parts | Product Life Cycle | Description |
|---|---|---|
| HMC930A-DIE | GaAs, pHEMT, MMIC, 0.25 W Power Amplifier, DC to 40 GHz |
Tools & Simulations
S-Parameter 1
Sys-Parameter Models for Keysight Genesys
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
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