DS1646
非易失时钟RAM
Viewing:
产品详情
- Integrates NV SRAM, Real-Time Clock, Crystal, Power-Fail Control Circuit and Lithium Energy Source
- Clock Registers are Accessed Identically to the Static RAM. These Registers are Resident in the Eight Top RAM Locations
- Totally Nonvolatile with Over 10 Years of Operation in the Absence of Power
- BCD-Coded Year, Month, Date, Day, Hours,Minutes, and Seconds with Leap Year Compensation Valid Up to 2100
- Power-Fail Write Protection Allows for ±10% VCC Power Supply Tolerance
- DS1646 only (DIP Module) Standard JEDEC Bytewide 128k x 8 RAM Pinout
- DS1646P Only (PowerCap Module Board)
- Surface Mountable Package for Direct Connection to PowerCap Containing Battery and Crystal
- Replaceable Battery (PowerCap)
- Power-Fail Output
- Pin-for-Pin Compatible with Other Densities of DS164xP Timekeeping RAM
参考资料
数据手册 2
可靠性数据 1
设计笔记 4
技术文章 2
这是最新版本的数据手册
硬件生态系统
| 部分模型 | 产品周期 | 描述 |
|---|---|---|
| 非易失性计时RAM 1 | ||
| DS9034PCX | PowerCap，带有晶振 | |
最新评论
需要发起讨论吗？ 没有关于 ds1646的相关讨论？是否需要发起讨论？
在EngineerZone®上发起讨论