
Gallium Nitride (GaN) Solutions in Radio Frequency (RF)
GaN power amplifiers provide high output power in a compact footprint coupled with high efficiency, resulting in reduced heat dissipation, greater overall system efficiency, and reduced system design complexity. GaN amplifiers also offer exceptional linearity over both narrow and wide bandwidths, ensuring signal fidelity and enhanced system performance. The inherent reliability and durability of Analog Devices’ GaN power amplifiers make them a practical choice for RF system designs across aerospace and defense, communications, and test and measurement markets, ensuring long-lasting and dependable operation in demanding environments.
Value and Benefits
Analog Devices GaN power amplifiers' industry-leading performance coupled with unparalleled design support enables designers to achieve the toughest sensing, amplifying, and communication link performance targets, getting your solutions to market quicker and providing your end customers with differentiating capabilities.
Reduce output combining losses and enable higher PAE
Deliver more power with GaN’s higher breakdown voltage
Benefit from higher power density and better thermal conductivity

Solution Resources
Developer Tools and Resources
Developer Tools
Simulation Models
Training and Support
Trainings and Tutorials
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