MAT02S
PRODUCTIONAerospace Low Noise, Matched Dual NPN Transistor
- Part Models
- 2
- 1ku List Price
- price unavailable
Part Details
- Low Offset Voltage: 50µV max
- Low Offset Voltage Drift
- High Gain (hFE):
500 min at IC = 1 mA
300 min at IC = 1 µA
- Low Noise Voltage at 100 Hz,
1 mA:1.0 nV/√Hz max - Excellent Log Conformance:
- rBE about = 0.3 Ohms
- Improved Direct Replacement for LM194
The design of the MAT02 series of NPN dual monolithic transistors is optimized for very low noise, low drift, and low rBE. ADI's exclusive Silicon Nitride "Triple Passivation" process stabilizes the critical device parameters over wide ranges of temperature and elapsed time. Also, the high current gain (hFE) of the MAT02 is maintained over a wide range of collector current. Exceptional characteristics of the MAT02 include offset voltage of 50µV max. Device performance is specified over the full military temperature range.
Input protection diodes are provided across the emitter-base junctions to prevent degredation of the device characteristics due to reversed-biased emitter current. The substrate is clamped to the most negative emitter by the parasitic isolation junction created by the protection diodes. This results in complete isolation between the transistors.
The MAT02 should be used in any application where low noise is priority. The MAT02 can be used as an input stage to make an amplifier with noise voltage of less than 1.0nV/Hz at 100 HZ. Other applications such as log/anti-log circuits, may use the excellent logging conformity of the MAT02. Typical bulk resistance is only 0.3 Ohm to 0.4 Ohm. The MAT02 electrical characteristics approach those of an ideal transistor when operated over a collector current range of 1µA to 10mA.
Documentation
Data Sheet 1
High Dose Rate Radiation Reports 1
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| MAT020000C | CHIPS OR DIE | ||
| MAT020903H | 6-Lead TO-78 |
| Part Models | Product Lifecycle | PCN |
|---|---|---|
|
Jul 30, 2018 - 16_0026 Qualify TeamQuest Technology, Inc. for Burn-in and Life Test of Military and Aerospace Devices |
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| MAT020000C | ||
| MAT020903H | ||
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Nov 18, 2015 - 15_0219 Laser Marking Standardization for Aerospace Packages |
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| MAT020000C | ||
| MAT020903H | ||
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Oct 2, 2013 - 13_0163 Qualify TSSI Cavite, Phils for Burn-in and Life Test of MIL-PRF-38535 QMLV Aerospace Devices |
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| MAT020903H | ||
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Nov 9, 2011 - 11_0050 Transfer of ADI Hermetics Assembly location from Paranaque, Manila to General Trias, Cavite Philippines |
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| MAT020903H | ||
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Nov 9, 2011 - 11_0182 Test Site Transfer from Analog Devices Philippines Inc in Paranaque to Analog Devices General Trias in Cavite, Philippines |
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| MAT020903H | ||
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Jun 1, 2011 - 11_0088 Top and Bottom Mark Standardization for Certain LCC (Leadless Chip Carrier) and Metal Can Packages |
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| MAT020903H | ||
This is the most up-to-date revision of the Data Sheet.