HMC907
ObsoleteHMC907 / HMC907LP5E
Half-Watt Power Amplifier Chip or SMT, 0.2 GHz to 22 GHz
Part Details
- P1dB output power: +26 dBm, +27 dBm
- Gain: 12 dB, 14 dB
- Output IP3: +36 dBm, +38 dBm
- Supply voltage: +10 V at 350 mA
- 50 Ω matched input/output
- Die size: 2.91 × 1.33 × 0.1 mm
- 32-lead, 5 × 5 mm, surface-mount technology (SMT) package
The HMC907 devices are GaAs, monolithic microwave integrated circuit (MMIC), PHEMT distributed power amplifiers which operate between 0.2 GHz and 22 GHz. These self-biased power amplifiers provide 12 dB and 14 dB of gain, +36 dBm or +38 dBm of output IP3, and +26 dBm or +27 dBm of output power at 1 dB gain compression, while requiring only 350 mA from a +10 V supply. Gain flatness is excellent at +0.6 dB or +0.7 dB from 0.2 GHz to 22 GHz, making these devices ideal for EW, ECM, radar, and test equipment applications. The inputs/outputs of these devices are internally matched to 50 Ω for ease of integration into multichip modules (MCMs). The half-watt power amplifier SMT is packaged in a leadless, QFN, 5 × 5 mm, surface-mount package and requires no external matching components. All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal 0.31 mm (12 mils) length.
Applications
- Test instrumentation
- Microwave radio and VSAT
- Military and space
- Telecom infrastructure
- Fiber optics
Documentation
Data Sheet 2
Quality Documentation 3
Tape & Reel Specification 1
This is the most up-to-date revision of the Data Sheet.
Hardware Ecosystem
| Parts | Product Life Cycle | Description |
|---|---|---|
| HMC907APM5E | GaAs pHEMT MMIC Power Amplifier 0.2 - 22 GHz | |
| HMC907A-Die | GaAs pHEMT MMIC Power Amplifier, 0.2 - 22 GHz |
Tools & Simulations
S-Parameter 2
Evaluation Kits
HMC907LP5E Evaluation Board