HMC757
ObsoleteHMC757 / HMC757LP4E
Half-Watt Power Amplifier Chip or SMT, 16 GHz to 24 GHz
Part Details
- Saturated output power:+27.5 dBm at 21% PAE, +30 dBm at 30% PAE
- High output IP3: 34.5 dBm, 37 dBm
- High gain: 20.5 dB, 22 dB
- DC supply: +5 V at 400 mA, +7 V at 395 mA
- 50 Ω matched input/output
- No external matching required
- Die size: 2.4 × 0.9 × 0.1 mm
- 32-lead, 5 × 5 mm, surface-mount technology (SMT) package
The HMC757 devices are three-stage, GaAs, PHEMT, monolithic microwave integrated circuit (MMIC), half-watt and one-watt power amplifiers which operate between 16 GHz and 24 GHz. These amplifiers provide up to 20.5 dB or 22 dB of gain and +27.5 dBm of saturated output power at 21% PAE or 30 dBm of saturated output power at 30% PAE from a +5 V or +7 V supply. The RF inputs/outputs are dc-blocked and matched to 50 Ω for ease of integration into multichip modules (MCMs). All data is taken with the chip in a 50 Ω test fixture connected via 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mils) length. The 4 × 4 mm, plastic package of the power amplifier SMT eliminates the need for wirebonding and is compatible with surface-mount manufacturing techniques.
Applications
- Point-to-point radios
- Point-to-multipoint radios
- VSAT
- Military and space
Suggested Replacement Parts
Medium Power Amplifier Chip, 17 - 24 GHz
Documentation
Data Sheet 1
Obsolete Data Sheet 1
Quality Documentation 3
Tape & Reel Specification 1
This is the most up-to-date revision of the Data Sheet.
Hardware Ecosystem
| Parts | Product Life Cycle | Description |
|---|---|---|
| HMC498LC4 | Medium Power Amplifier SMT, 17 - 24 GHz | |
| HMC498-Die | Medium Power Amplifier Chip, 17 - 24 GHz |
Tools & Simulations
S-Parameter 1
Evaluation Kits
HMC757LP4E Evaluation Board
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