HMC863
ObsoleteHMC863 / HMC863LP4E
Half-Watt Power Amplifier Chip or SMT, 22 GHz to 26.5 GHz or 24 GHz to 29.5 GHz
Part Details
- Saturated output power: +27.5 dBm at 15% PAE, +28 dBm at 18% PAE
- High output IP3: +33 dBm, +39 dBm
- High gain: 21.5 dB, 27 dB
- DC supply: +6 V at 350 mA or 375 mA
- 50 Ω matched input/output
- Die size: 2.41 × 0.95 × 0.1 mm
- 24-lead, 4 × 4 mm, surface-mount technology (SMT) package
The HMC863 devices are three-stage, GaAs, monolithic microwave integrated circuit (MMIC), and PHEMT half-watt power amplifiers which operate between 22 GHz to 26.5 GHz or 24 GHz to 29.5 GHz. These amplifiers provide up to 21.5 dB or 27 dB of gain and +27.5 dBm at 15% PAE or +28 dBm at 18% PAE of saturated output power from a +6 V supply. The RF inputs/outputs are dc-blocked and matched to 50 Ω for ease of integration into multichip modules (MCMs) or higher level assemblies. All data is taken with the chip in a 50 Ω test fixture connected via 0.025 mm (1 mil) diameter wire bonds of 0.31 mm (12 mils) length. The power amplifier SMT can also be operated from a 5 V supply with only a slight decrease in output power and IP3.
Applications
- Point-to-point radios
- Point-to-multipoint radios
- VSAT
- Military and space
Suggested Replacement Parts
GaAs pHEMT MMIC 1/2 Watt Power Amplifier, 24 - 29.5 GHz
Documentation
Data Sheet 2
This is the most up-to-date revision of the Data Sheet.
Hardware Ecosystem
| Parts | Product Life Cycle | Description |
|---|---|---|
| HMC863ALC4 | RECOMMENDED FOR NEW DESIGNS | GaAs pHEMT MMIC 1/2 Watt Power Amplifier, 24 - 29.5 GHz |
Evaluation Kits
HMC863LP4E Evaluation Board