Silicon (SOI) Switches

The ADRF5024 is a reflective, single-pole double-throw (SPDT) switch manufactured in the silicon process.

This switch operates from 100 MHz to 44 GHz with better than 1.7 dB of insertion loss and 35 dB of isolation. The ADRF5024 has an radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching.

The ADRF5024 draws a low current of 14 µA on the positive supply of +3.3 V and 120 µA on negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)compatible controls.

The ADRF5024 is pin-compatible with the ADRF5025, low frequency cutoff version, which operates from 9 kHz to 44 GHz.

The ADRF5024 RF ports are designed to match a characteristic impedance of 50 Ω. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Electrical Specifications section, Typical Performance Characteristics section, and Applications Information section for more details.

The ADRF5024 comes in a 2.25 mm × 2.25 mm, 12-terminal, RoHS-compliant, land grid array (LGA) package and can operate between −40°C to +105°C.

The ADRF5024-EP supports defense and aerospace applications (AQEC).

Applications

• Industrial scanners
• Test and instrumentation
• Cellular infrastructure: 5G mmWave
• Military radios, radars, electronic counter measures (ECMs)
• Microwave radios and very small aperture terminals (VSATs)

The ADRF5025 is a reflective single-pole double-throw (SPDT) switch, manufactured in silicon process.

This switch operates from 9 kHz to 44 GHz with better than 1.6 dB of insertion loss and 35 dB of isolation. The ADRF5025 has a radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching at the RFC pin.

The ADRF5025 draws a low current of 14 µA on the positive supply of +3.3 V and 120 µA on negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low voltage transistor to transistor logic (LVTTL)-compatible controls.

The ADRF5025 is pin compatible with the ADRF5024, low frequency cutoff version, which operates from 100 MHz to 44 GHz.

The ADRF5025 RF ports are designed to match a characteristic impedance of 50 Ω. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Electrical Specifications section, the Typical Performance Characteristics section, and the Applications Information section for more details.

The ADRF5025 comes in a 2.25 mm × 2.25 mm, 12-terminal, RoHS-compliant, land grid array (LGA) package and can operate from −40°C to +105°C.

Applications

• Industrial scanners
• Test and instrumentation
• Cellular infrastructure: 5G mmWave
• Military radios, radars, electronic counter measures (ECMs)
• Microwave radios and very small aperture terminals (VSATs)

The ADRF5046 is a reflective, single-pole four-throw (SP4T) switch manufactured in the silicon process.

The ADRF5046 operates from 100 MHz to 44 GHz with insertion loss of lower than 3.0 dB and isolation of higher than 31 dB. The device has a radio frequency (RF) input power handling capability of 27 dBm for both the through path and hot switching at RFC pin.

The ADRF5046 draws a low current of 3 μA on the positive supply of +3.3 V, and −110 μA on the negative supply of −3.3 V. The device provides complementary metal-oxide semiconductor (CMOS)-/low voltage transistor-transistor logic (LVTTL)-compatible controls.

The ADRF5046 comes in a 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from −40°C to +105°C. 

Applications

• Industrial Scanner
• Test and instrumentation
• Cellular Infrastructure – mmWave 5G
• Military radios, radars, electronic counter measures (ECMs)
• Microwave radios and very small aperture terminals (VSATs)

The ADRF5047 is a reflective, single-pole, four-throw (SP4T) switch manufactured in the silicon process.

The ADRF5047 operates from 9 kHz to 44 GHz with an insertion loss of lower than 2.7 dB and isolation of higher than 31 dB. The device has a radio frequency (RF) input power handling capability of 26 dBm for both through path and hot switching at RFC.

The ADRF5047 draws a low current of 3 μA on the positive supply of +3.3 V, and −110 μA on the negative supply of −3.3 V. The device provides complementary metal-oxide semiconductor (CMOS)-/low voltage transistor-transistor logic (LVTTL)-compatible controls.

The ADRF5047 is pin-compatible with the ADRF5046, fast switching version, which operates from 100 MHz to 44 GHz.

The ADRF5047 comes in a 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from −40°C to +105°C.

Applications

• Industrial scanner
• Test instrumentation
• Cellular infrastructure—mmWave 5G
• Military radios, radars, and electronic counter measures (ECMs)
• Microwave radios and very small aperture terminals (VSATs)

The ADRF5026 is a nonreflective, single-pole, double-throw (SPDT) radio frequency (RF) switch manufactured in a silicon process.

The ADRF5026 operates from 100 MHz to 44 GHz with better than 3.8 dB of insertion loss and 45 dB of isolation. The ADRF5026 features an all off control, where both RF ports are in an isolation state. The ADRF5026 has a nonreflective design and both of the RF ports are internally terminated to 50 Ω.

The ADRF5026 requires a dual-supply voltage of +3.3 V and −3.3 V. The device employs complimentary metal-oxide semiconductor/low-voltage transistor-transistor logic (CMOS/LVTTL) logic-compatible controls.

The ADRF5026 is pin-compatible with the ADRF5027 low frequency cutoff version, which operates from 9 kHz to 44 GHz.

The ADRF5026 RF ports are designed to match a characteristic impedance of 50 Ω. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Narrow-Band Impedance Matching section for an example of a matched circuit that achieves a flat insertion loss response of 2.4 dB from 28 GHz to 43 GHz.

The ADRF5026 comes in a 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from −40°C to +105°C.

The ADRF5026 supports defense and aerospace applications (AQEC).

Applications

• Industrial scanners
• Test and instrumentation
• Cellular infrastructure: 5G mmWave
• Military radios, radars, electronic counter measures (ECMs)
• Microwave radios and very small aperture terminals (VSATs)

The ADRF5027 is a nonreflective, single-pole, double-throw (SPDT) radio frequency (RF) switch manufactured in a silicon process.

The ADRF5027 operates from 9 kHz to 44 GHz with better than 3.8 dB of insertion loss and 43 dB of isolation. The ADRF5027 features an all off control, where both RF ports are in an isolation state. The ADRF5027 has a nonreflective design and both of the RF ports are internally terminated to 50 Ω.

The ADRF5027 requires a dual-supply voltage of +3.3 V and −3.3 V. The device employs complimentary metal-oxide semiconductor/low-voltage transistor-transistor logic (CMOS/LVTTL) logic-compatible controls.

The ADRF5027 is pin compatible with the ADRF5026 fast switching version, which operates from 100 MHz to 44 GHz.

The ADRF5027 RF ports are designed to match a characteristic impedance of 50 Ω. For ultrawideband products, impedance matching on the RF transmission lines can further optimize high frequency insertion loss and return loss characteristics. Refer to the Narrow-Band Impedance Matching section for an example of a matched circuit that achieves a low insertion loss response of 2.2 dB from 28 GHz to 43 GHz.

The ADRF5027 comes in a 20-terminal, 3 mm × 3 mm, RoHS-compliant, land grid array (LGA) package and can operate from −40°C to +105°C.

Applications

• Industrial scanners
• Test and instrumentation
• Cellular infrastructure: 5G mmWave
• Military radios, radars, electronic counter measures (ECMs)
• Microwave radios and very small aperture terminals (VSATs)

The ADRF5020 is a general-purpose, single-pole, double-throw (SPDT) switch manufactured using a silicon process. It comes in a 3 mm × 3 mm, 20-lead land grid array (LGA) package and provides high isolation and low insertion loss from 100 MHz to 30 GHz.

This broadband switch requires dual supply voltages, +3.3 V and −2.5 V, and provides CMOS/LVTTL logic-compatible control.

Applications

• Test instrumentation
• Microwave radios and very small aperture terminals (VSATs)
• Military radios, radars, electronic counter measures (ECMs)
• Broadband telecommunications systems

The ADRF5021 is a general-purpose single-pole, double-throw (SPDT) switch manufactured using a silicon process. It comes in a 3 mm × 3 mm, 20-terminal land grid array (LGA) package and provides high isolation and low insertion loss from 9 kHz to 30 GHz.

This broadband switch requires dual supply voltages, +3.3 V and −2.5 V, and provides CMOS/LVTTL logic-compatible control.

Applications

• Test instrumentation
• Microwave radios and very small aperture terminals (VSATs)
• Military radios, radars, electronic counter measures (ECMs)
• Broadband telecommunications systems

The ADRF5044 is a general-purpose, single-pole, four-throw (SP4T) switch manufactured using a silicon process. It comes in a 24-terminal land grid array (LGA) package and provides high isolation and low insertion loss from 100 MHz to 30 GHz.

This broadband switch requires dual-supply voltages, +3.3 V and −3.3 V, and provides complementary metal-oxide semiconductor (CMOS)/low voltage transistor-transistor logic (LVTTL) logic-compatible control.

Applications

• Test instrumentation
• Microwave radios and very small aperture terminals (VSATs)
• Military radios, radars, and electronic counter measures (ECMs)
• Broadband telecommunications systems

The ADRF5045 is a general-purpose, single-pole, four-throw (SP4T) switch manufactured using a silicon process. It comes in a 24-terminal land grid array (LGA) package and provides high isolation and low insertion loss from 9 kHz to 30 GHz.

This broadband switch requires dual supply voltages, +3.3 V and −3.3 V, and provides complementary metal-oxide semiconductor (CMOS)/low voltage transistor-transistor logic (LVTTL) logiccompatible control.

Applications

• Test instrumentation
• Microwave radios and very small aperture terminals (VSATs)
• Military radios, radars, and electronic counter measures (ECMs)
• Broadband telecommunications systems