HMC797
ObsoleteHMC797 / HMC797LP5E
1-Watt Power Amplifier Chip or SMT, DC to 22 GHz
Part Details
- High P1dB output power: +28 dBm
- High PSAT output power: +29.5 dBm, +31 dBm
- High gain: 13.5 dB, 14.5 dB
- High output IP3: +39 dBm, +40 dBm
- Supply voltage: +10 V at 400 mA
- 50 Ω matched input/output
- Die size: 2.89 × 1.55 × 0.1 mm
- 32-lead, 5 × 5 mm, surface-mount technology (SMT) package
The HMC797 devices are GaAs, monolithic microwave integrated circuit (MMIC), and PHEMT distributed power amplifiers which operate between dc and 22 GHz. These amplifiers provide up to 13.5 dB or 14.5 dB of gain, +39 dBm or +40 dBm of output IP3, and +28 dBm of output power at 1 dB gain compression, while requiring 400 mA from a +10 V supply. These versatile power amplifiers exhibit a positive gain slope from dc to 22 GHz, making them ideal for EW, ECM, radar, and test equipment applications. The inputs/outputs of these devices are internally matched to 50 Ω, facilitating integration into multichip modules (MCMs). All chip data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal 0.31 mm (12 mils) length. The power amplifier SMT is packaged in a leadless, QFN, 5 × 5 mm, surface-mount package and requires no external matching components.
Applications
- Test instrumentation
- Microwave radio and VSAT
- Military and space
- Telecom infrastructure
- Fiber optics
Documentation
Data Sheet 2
Quality Documentation 3
Tape & Reel Specification 1
This is the most up-to-date revision of the Data Sheet.
Hardware Ecosystem
| Parts | Product Life Cycle | Description |
|---|---|---|
| HMC797APM5E | GaAs pHEMT MMIC 1 Watt Power Amplifier, DC - 22 GHz | |
| HMC797A-Die | GaAs pHEMT MMIC 1 Watt Power Amplifier, DC - 22 GHz |
Tools & Simulations
S-Parameter 2
Evaluation Kits
HMC797LP5E Evaluation Board