Analog Devices RF and microwave components are available as drop-in X-MWblocks®
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HMC637BPM5E
RECOMMENDED FOR NEW DESIGNSGaAs, pHEMT, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier
- Part Models
- 2
- 1ku List Price
- price unavailable
Part Details
- P1dB output power: 28 dBm typical
- Gain: 15.5 dB typical
- Output IP3: 39 dBm typical
- Self biased at VDD = 12 V at 345 mA typical
- Optional bias control on VGG1 for IDQ adjustment
- Optional bias control on VGG2 for IP2 and IP3 optimization
- 50 Ω matched input/output
- 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2
The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier. The device is self biased in normal operation and features optional bias control for quiescent current (IDQ) adjustment and for second-order intercept (IP2) and third-order intercept (IP3) optimization. The amplifier operates from dc to 7.5 GHz, providing 15.5 dB of small signal gain, 28 dBm output power at 1 dB gain compression, a typical output IP3 of 39 dBm, and a 3.5 dB noise figure, while requiring 345 mA from a 12 V supply voltage (VDD). Gain flatness is excellent from dc to 7.5 GHz at ±0.5 dB typical, making the HMC637BPM5E ideal for military, space, and test equipment applications. The HMC637BPM5E also features inputs/outputs (I/Os) that are internally matched to 50 Ω, housed in a RoHS-compliant, 5 mm × 5 mm, premolded cavity, lead frame chip scale package (LFCSP), making the device compatible with high volume, surface-mount technology (SMT) assembly equipment.
Applications
- Military and space
- Test Instrumentation
Documentation
Data Sheet 1
Application Note 3
Product Selection Guide 1
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC637BPM5E | 32-Lead LFCSP (5mm x 5mm w/ EP) | ||
| HMC637BPM5ETR | 32-Lead LFCSP (5mm x 5mm w/ EP) |
| Part Models | Product Lifecycle | PCN |
|---|---|---|
|
Mar 19, 2021 - 20_0308 Epoxy Change at ASE Chungli Branch for PM5E and ACGZN Packages |
||
| HMC637BPM5E | PRODUCTION | |
| HMC637BPM5ETR | PRODUCTION | |
This is the most up-to-date revision of the Data Sheet.
Tools & Simulations
S-Parameter 1
Sys-Parameter Models for Keysight Genesys
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
Open ToolADIsimRF
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
Open ToolEvaluation Kits
HMC637BPM5E Evaluation Board