Analog Devices RF and microwave components are available as drop-in X-MWblocks®
from Quantic™ X-Microwave.
HMC637ALP5E
PRODUCTIONGaAs, pHEMT, MMIC, 1 W Power Amplifier, 0.1 GHz to 6 GHz
- Part Models
- 4
- 1ku List Price
- price unavailable
Part Details
- P1dB output power: 29 dBm
- Gain: 13 dB
- Output IP3: 44 dBm
- 50 Ω matched input/output
- 32-lead, 5 mm × 5 mm LFCSP package: 25 mm2
- 1 assembly/test site
- 1 fabrication site
- Download the HMC637ASCPZ-EP data sheet (pdf)
- Military temperature range: −55°C to +105°C
- Product change notification
- Controlled manufacturing baseline
- Qualification data available on request
- V62/19618 DSCC Drawing Number
The HMC637ALP5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT) distributed power amplifier which operates between 0.1 GHz and 6 GHz. The amplifier provides 13 dB of gain, 44 dBm output third-order intercept (IP3), and 29 dBm of output power at 1 dB gain compression while requiring 400 mA from a 12 V supply. Gain flatness is ±0.75 dB from 100 MHz to 6 GHz making the HMC637ALP5E ideal for electronic warfare (EW), electronic counter-measure (ECM), radar and test equipment applications. The HMC637ALP5E amplifier radio frequency (RF) I/Os are internally matched to 50 Ω, and the 5 mm × 5 mm lead frame chip scale package (LFCSP) is compatible with high volume surface-mount technology (SMT) assembly equipment.
Applications
- Telecom infrastructure
- Microwave radio
- Very small aperture terminal (VSAT)
- Military and space
- Test instrumentation
- Fiber optics
Documentation
Data Sheet 3
Application Note 4
Quality Documentation 2
Product Selection Guide 1
Tape & Reel Specification 1
ADI has always placed the highest emphasis on delivering products that meet the maximum levels of quality and reliability. We achieve this by incorporating quality and reliability checks in every scope of product and process design, and in the manufacturing process as well. "Zero defects" for shipped products is always our goal. View our quality and reliability program and certifications for more information.
| Part Model | Pin/Package Drawing | Documentation | CAD Symbols, Footprints, and 3D Models |
|---|---|---|---|
| HMC637ALP5E | 32-Lead QFN (5mm x 5mm w/ EP) | ||
| HMC637ALP5ETR | 32-Lead QFN (5mm x 5mm w/ EP) | ||
| HMC637ASCPZ-EP-PT | 32-lead LFCSP (5mm x 5mm) | ||
| HMC637ASCPZ-EP-R7 | 32-lead LFCSP (5mm x 5mm) |
This is the most up-to-date revision of the Data Sheet.
Tools & Simulations
S-Parameter 1
Sys-Parameter Models for Keysight Genesys
Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.
Open ToolADIsimRF
ADIsimRF is an easy-to-use RF signal chain calculator. Cascaded gain, noise, distortion and power consumption can be calculated, plotted and exported for signal chains with up to 50 stages. ADIsimRF also includes an extensive data base of device models for ADI’s RF and mixed signal components.
Open Tool