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HMC635LC4

量产

GaAs PHEMT MMIC驱动放大器，18 - 40 GHz

数据手册产品选型表

产品模型: 3

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产品详情

增益： 18.5 dB ^[1]
P1dB: +22 dBm ^[1]
输出IP3： +27 dBm
饱和功率：
+23.5 dBm (15% PAE ^[1])
电源电压： +5V @
280 mA
50 Ω匹配输入/输出
24引脚4x4mm
SMT陶瓷封装： 16mm²

参考资料

数据手册 1

HMC635LC4: GaAs PHEMT MMIC Driver Amplifier, 18 - 40 GHz Data Sheet 10/19/2015

应用笔记 3

利用有源偏置控制器满足外部偏置射频/微波放大器的偏置要求 05/13/2020

AN-1604: Thermal Management Calculations for RF Amplifiers in LFCSP and Flange Packages 08/01/2019

Thermal Management for Surface Mount Components General Application Note 11/11/2015

ADI 始终高度重视提供符合最高质量和可靠性水平的产品。我们通过将质量和可靠性检查纳入产品和工艺设计的各个范围以及制造过程来实现这一目标。出货产品的“零缺陷”始终是我们的目标。查看我们的质量和可靠性计划和认证以了解更多信息。

产品型号	引脚/封装图-中文版	文档	CAD 符号，脚注和 3D模型
HMC635LC4	24-Lead LCC (4 x 4mm)	Material Declaration Reliablity Data	Ultra Librarian SamacSys
HMC635LC4TR	24-Lead LCC (4 x 4mm)	Material Declaration Reliablity Data	Ultra Librarian SamacSys
HMC635LC4TR-R5	24-Lead LCC (4 x 4mm)	Material Declaration Reliablity Data	Ultra Librarian SamacSys

这是最新版本的数据手册

工具及仿真模型

S-参数 1

HMC635LC4 S-Parameters

Sys-Parameter Models for Keysight Genesys

Sys-Parameter models contain behavioral parameters, such as P1dB, IP3, gain, noise figure and return loss, which describe nonlinear and linear characteristics of a device.

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